Part Details for FDMS86252 by Fairchild Semiconductor Corporation
Overview of FDMS86252 by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for FDMS86252
Part # | Distributor | Description | Stock | Price | Buy | |
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Win Source Electronics | Max rDS(on) = 51 mΩ at VGS = 10 V, ID = 4.6 A | 64100 |
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$1.7470 / $2.6200 | Buy Now |
Part Details for FDMS86252
FDMS86252 CAD Models
FDMS86252 Part Data Attributes
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FDMS86252
Fairchild Semiconductor Corporation
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Datasheet
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FDMS86252
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 4.6A I(D), 150V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, POWER 56, 8 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | QFN | |
Package Description | ROHS COMPLIANT, POWER 56, 8 PIN | |
Pin Count | 8 | |
Manufacturer Package Code | 8LD,PQFN,JEDEC MO-240 AA,5.0X6.0MM | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 50 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 150 V | |
Drain Current-Max (ID) | 4.6 A | |
Drain-source On Resistance-Max | 0.051 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MO-240AA | |
JESD-30 Code | R-PDSO-F5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 69 W | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |