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Single P-Channel PowerTrench® MOSFET -30V, -1.3A, 180mΩ, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
58M6632
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Newark | Mosfet, P-Ch, 30V, 1.3A, Supersot, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:1.3A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Onsemi FDN352AP Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 89669 |
|
$0.1720 / $0.3330 | Buy Now |
DISTI #
64K0974
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Newark | P Channel Mosfet, -30V, 1.3A Super Sot-3, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:1.3A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Onsemi FDN352AP Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.1660 | Buy Now |
DISTI #
25AC9554
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Newark | Ssot3 Pch Trench Mosf Rohs Compliant: Yes |Onsemi FDN352AP Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.1300 / $0.1470 | Buy Now |
DISTI #
67R2062
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Newark | Mosfet, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:1.3A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V, Power Dissipation:500Mw Rohs Compliant: Yes |Onsemi FDN352AP Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.1300 / $0.1370 | Buy Now |
DISTI #
FDN352APCT-ND
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DigiKey | MOSFET P-CH 30V 1.3A SUPERSOT3 Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
81636 In Stock |
|
$0.1240 / $0.4400 | Buy Now |
DISTI #
FDN352AP
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Avnet Americas | Trans MOSFET P-CH 30V 1.3A 3-Pin SuperSOT T/R - Tape and Reel (Alt: FDN352AP) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 51000 |
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$0.1079 / $0.1288 | Buy Now |
DISTI #
FDN352AP
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Avnet Americas | Trans MOSFET P-CH 30V 1.3A 3-Pin SuperSOT T/R - Tape and Reel (Alt: FDN352AP) RoHS: Compliant Min Qty: 4167 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 501000 Partner Stock |
|
$0.1488 / $0.1776 | Buy Now |
DISTI #
FDN352AP
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Avnet Americas | Trans MOSFET P-CH 30V 1.3A 3-Pin SuperSOT T/R - Tape and Reel (Alt: FDN352AP) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
|
$0.1061 / $0.1270 | Buy Now |
DISTI #
FDN352AP
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Avnet Americas | Trans MOSFET P-CH 30V 1.3A 3-Pin SuperSOT T/R - Tape and Reel (Alt: FDN352AP) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
|
$0.1079 / $0.1288 | Buy Now |
DISTI #
512-FDN352AP
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Mouser Electronics | MOSFET SINGLE PCH TRENCH MOSFET RoHS: Compliant | 183445 |
|
$0.1230 / $0.4100 | Buy Now |
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FDN352AP
onsemi
Buy Now
Datasheet
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Compare Parts:
FDN352AP
onsemi
Single P-Channel PowerTrench® MOSFET -30V, -1.3A, 180mΩ, 3000-REEL
|
Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Package Description | SUPERSOT-3, 3 PIN | |
Manufacturer Package Code | 527AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 54 Weeks | |
Samacsys Manufacturer | onsemi | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 1.3 A | |
Drain-source On Resistance-Max | 0.18 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 0.5 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for FDN352AP. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDN352AP, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FDN352AP | 1300mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-3, 3 PIN | Rochester Electronics LLC | FDN352AP vs FDN352AP |
FDN352AP_NL | Small Signal Field-Effect Transistor, 1.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3, 3 PIN | Fairchild Semiconductor Corporation | FDN352AP vs FDN352AP_NL |
FDN352AP | Small Signal Field-Effect Transistor, 1.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3, 3 PIN | Fairchild Semiconductor Corporation | FDN352AP vs FDN352AP |