Part Details for FDP047N08-F102 by onsemi
Overview of FDP047N08-F102 by onsemi
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Medical Imaging
Automotive
Robotics and Drones
Price & Stock for FDP047N08-F102
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
48AC1018
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Newark | Fet 75V 4.7 Mohm To220/Tube Rohs Compliant: Yes |Onsemi FDP047N08-F102 Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$1.2300 / $1.7400 | Buy Now |
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DISTI #
FDP047N08-F102-ND
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DigiKey | MOSFET N-CH 75V 164A TO220-3 Min Qty: 1 Lead time: 21 Weeks Container: Tube |
3196 In Stock |
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$1.2148 / $2.8000 | Buy Now |
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DISTI #
FDP047N08-F102
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Avnet Americas | N-Channel PowerTrench MOSFET 75V 164A 4.7mOhm 3-Pin TO-220 Tube - Rail/Tube (Alt: FDP047N08-F102) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 21 Weeks, 0 Days Container: Tube | 0 |
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$1.1652 / $1.3908 | Buy Now |
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DISTI #
512-FDP047N08_F102
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Mouser Electronics | MOSFET PT3 75V | 0 |
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$1.2100 / $1.3200 | Order Now |
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Rochester Electronics | Power Field-Effect Transistor, 164A, 75V, 0.0047ohm, N-Channel, MOSFET, TO-220AB RoHS: Compliant Status: Active Min Qty: 1 | 13522 |
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$1.1600 / $1.3700 | Buy Now |
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DISTI #
FDP047N08-F102
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Avnet Americas | N-Channel PowerTrench MOSFET 75V 164A 4.7mOhm 3-Pin TO-220 Tube - Rail/Tube (Alt: FDP047N08-F102) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 21 Weeks, 0 Days Container: Tube | 0 |
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$1.1652 / $1.3908 | Buy Now |
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DISTI #
FDP047N08-F102
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TME | Transistor: N-MOSFET, unipolar, 75V, 116A, Idm: 656A, 168W, TO220-3 Min Qty: 1 | 24 |
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$1.5500 / $2.3900 | Buy Now |
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DISTI #
FDP047N08-F102
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 800 | 0 |
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$1.1700 | Buy Now |
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DISTI #
FDP047N08-F102
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Avnet Silica | N-Channel PowerTrench MOSFET 75V 164A 4.7mOhm 3-Pin TO-220 Tube (Alt: FDP047N08-F102) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 3 Weeks, 1 Days | Silica - 750 |
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Buy Now | |
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DISTI #
FDP047N08-F102
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EBV Elektronik | N-Channel PowerTrench MOSFET 75V 164A 4.7mOhm 3-Pin TO-220 Tube (Alt: FDP047N08-F102) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 3 Weeks, 2 Days | EBV - 0 |
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Buy Now |
Part Details for FDP047N08-F102
FDP047N08-F102 CAD Models
FDP047N08-F102 Part Data Attributes:
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FDP047N08-F102
onsemi
Buy Now
Datasheet
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Compare Parts:
FDP047N08-F102
onsemi
N-Channel PowerTrench® MOSFET 75V, 164A, 4.7mΩ, TO-220 3L, 800-TUBE
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-220 3L | |
| Package Description | TO-220, 3 PIN | |
| Manufacturer Package Code | 221A | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 670 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 75 V | |
| Drain Current-Max (ID) | 164 A | |
| Drain-source On Resistance-Max | 0.0047 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 615 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 268 W | |
| Pulsed Drain Current-Max (IDM) | 656 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 688 ns | |
| Turn-on Time-Max (ton) | 514 ns |