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Part Details for FDS6670AS by onsemi
Overview of FDS6670AS by onsemi
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (5 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDS6670AS
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
46AC0810
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Newark | Mosfet, N-Ch, 30V, 13.5A, Soic-8, Transistor Polarity:N Channel, Continuous Drain Current Id:13.5A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.0075Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.7V, Power Rohs Compliant: Yes |Onsemi FDS6670AS Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
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DISTI #
FDS6670AS
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Avnet Americas | Trans MOSFET N-CH 30V 13.5A 8-Pin SOIC N T/R (Alt: FDS6670AS) RoHS: Compliant Min Qty: 2217 Package Multiple: 1 | 0 |
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RFQ | |
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Bristol Electronics | 1373 |
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RFQ | ||
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Rochester Electronics | Small Signal Field-Effect Transistor, 13.5A, 30V, N-Channel, MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 354 |
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$0.3221 / $0.3789 | Buy Now |
Part Details for FDS6670AS
FDS6670AS CAD Models
FDS6670AS Part Data Attributes:
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FDS6670AS
onsemi
Buy Now
Datasheet
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Compare Parts:
FDS6670AS
onsemi
N-Channel PowerTrench® SyncFET™, 30V, 13.5A, 9.0mΩ, 2500-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | SO-8 | |
| Manufacturer Package Code | 751EB | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 13.5 A | |
| Drain-source On Resistance-Max | 0.009 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDS6670AS
This table gives cross-reference parts and alternative options found for FDS6670AS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS6670AS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDS6670S | 13500mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8 | Rochester Electronics LLC | FDS6670AS vs FDS6670S |
| FDS6670S_NL | Small Signal Field-Effect Transistor, 13.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | FDS6670AS vs FDS6670S_NL |
| FDS6670AS_NL | Small Signal Field-Effect Transistor, 13.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 | Fairchild Semiconductor Corporation | FDS6670AS vs FDS6670AS_NL |
| FDS6670S_NL | 13500mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8 | Rochester Electronics LLC | FDS6670AS vs FDS6670S_NL |
| FDS6670AS | Small Signal Field-Effect Transistor, 13.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | FDS6670AS vs FDS6670AS |