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Dual N-Channel Shielded Gate PowerTrench® MOSFET 100V, 2.7A, 105mΩ, 2500-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
46AC0812
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Newark | Mosfet, N-Ch, 100V, 2.7A, 150Deg C, 1.6W, Channel Type:N Channel + Schottky, Drain Source Voltage Vds N Channel:100V, Drain Source Voltage Vds P Channel:100V, Continuous Drain Current Id N Channel:2.7A, No. Of Pins:8Pins Rohs Compliant: Yes |Onsemi FDS89161LZ Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 414 |
|
$0.7780 / $1.6300 | Buy Now |
DISTI #
54T8361
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Newark | Fet 100V 105.0 Mohm So8/Reel |Onsemi FDS89161LZ Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.5550 / $0.7520 | Buy Now |
DISTI #
FDS89161LZCT-ND
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DigiKey | MOSFET 2N-CH 100V 2.7A 8SOIC Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
10000 In Stock |
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$0.5473 / $1.4600 | Buy Now |
DISTI #
FDS89161LZ
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Avnet Americas | Transistor MOSFET Array Dual N-CH 100V 2.7A 8-Pin SOIC T/R - Tape and Reel (Alt: FDS89161LZ) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks, 0 Days Container: Reel | 12500 |
|
$0.5419 / $0.6468 | Buy Now |
DISTI #
512-FDS89161LZ
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Mouser Electronics | MOSFET PT5 100V Logic Level with Zener RoHS: Compliant | 58821 |
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$0.5470 / $1.4600 | Buy Now |
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Future Electronics | FDS89161LZ Series 100 V 2.7 A 105 mOhm Dual N-Ch PowerTrench Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.5600 / $0.5900 | Buy Now |
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Future Electronics | FDS89161LZ Series 100 V 2.7 A 105 mOhm Dual N-Ch PowerTrench Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.5600 / $0.5900 | Buy Now |
DISTI #
FDS89161LZ
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TME | Transistor: N-MOSFET x2, unipolar, 100V, 2.7A, 31W, SO8 Min Qty: 1 | 0 |
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$0.7100 / $1.0600 | RFQ |
DISTI #
SMC-FDS89161LZ
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Sensible Micro Corporation | OEM Excess 5-7 Days Leadtime, We are an AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days | 16 |
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RFQ | |
DISTI #
FDS89161LZ
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Avnet Asia | Transistor MOSFET Array Dual N-CH 100V 2.7A 8-Pin SOIC T/R (Alt: FDS89161LZ) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks, 0 Days | 0 |
|
$0.5141 / $0.5750 | Buy Now |
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FDS89161LZ
onsemi
Buy Now
Datasheet
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FDS89161LZ
onsemi
Dual N-Channel Shielded Gate PowerTrench® MOSFET 100V, 2.7A, 105mΩ, 2500-REEL
|
Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Package Description | SOP-8 | |
Manufacturer Package Code | 751EB | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 52 Weeks | |
Samacsys Manufacturer | onsemi | |
Additional Feature | ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 13 mJ | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 2.7 A | |
Drain-source On Resistance-Max | 0.105 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 31 W | |
Pulsed Drain Current-Max (IDM) | 15 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |