Datasheets
FDS8962C by:

Power Field-Effect Transistor, 7A I(D), 30V, 0.03ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

Part Details for FDS8962C by Fairchild Semiconductor Corporation

Overview of FDS8962C by Fairchild Semiconductor Corporation

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Price & Stock for FDS8962C

Part # Distributor Description Stock Price Buy
Chip1Cloud MOSFET N/P-CH 30V 7A/5A 8SOIC 27000
RFQ
Vyrian OEM/CM Only 2498
RFQ

Part Details for FDS8962C

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FDS8962C Part Data Attributes:

FDS8962C Fairchild Semiconductor Corporation
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FDS8962C Fairchild Semiconductor Corporation Power Field-Effect Transistor, 7A I(D), 30V, 0.03ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOIC
Package Description SOP-8
Pin Count 8
Manufacturer Package Code 8LD, JEDEC MS-012, .150"NARROW BODY
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 7 A
Drain-source On Resistance-Max 0.03 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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