Part Details for FF200R06KE3 by Infineon Technologies AG
Overview of FF200R06KE3 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for FF200R06KE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
641-FF200R06KE3
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Mouser Electronics | IGBT Modules N-CH 600V 260A RoHS: Compliant | 20 |
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$102.1700 / $115.9000 | Buy Now |
Part Details for FF200R06KE3
FF200R06KE3 CAD Models
FF200R06KE3 Part Data Attributes
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FF200R06KE3
Infineon Technologies AG
Buy Now
Datasheet
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FF200R06KE3
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 260A I(C), 600V V(BR)CES, N-Channel, MODULE-7
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | MODULE | |
Package Description | FLANGE MOUNT, R-XUFM-X7 | |
Pin Count | 7 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 260 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X7 | |
Number of Elements | 2 | |
Number of Terminals | 7 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 680 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 600 ns | |
Turn-on Time-Nom (ton) | 190 ns | |
VCEsat-Max | 1.9 V |
Alternate Parts for FF200R06KE3
This table gives cross-reference parts and alternative options found for FF200R06KE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FF200R06KE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SKM195GB066D | Insulated Gate Bipolar Transistor, 265A I(C), 600V V(BR)CES, N-Channel, CASE D 61, SEMITRANS 2, 7 PIN | SEMIKRON | FF200R06KE3 vs SKM195GB066D |
SKM200GB063D | Insulated Gate Bipolar Transistor, 260A I(C), 600V V(BR)CES, N-Channel, CASE D 56, SEMITRANS 3, 7 PIN | SEMIKRON | FF200R06KE3 vs SKM200GB063D |
APTGF165A60D1G | Insulated Gate Bipolar Transistor, 230A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-7 | Microsemi Corporation | FF200R06KE3 vs APTGF165A60D1G |