Datasheets
FF200R06KE3HOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 260A I(C), 600V V(BR)CES, N-Channel, MODULE-7

Part Details for FF200R06KE3HOSA1 by Infineon Technologies AG

Overview of FF200R06KE3HOSA1 by Infineon Technologies AG

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Price & Stock for FF200R06KE3HOSA1

Part # Distributor Description Stock Price Buy
DISTI # 49AC0217
Newark Igbt, Module, N-Ch, 600V, 260A, Transistor Polarity:N Channel, Dc Collector Current:260A, Collector Emitter Saturation Voltage Vce(On):1.45V, Power Dissipation Pd:680W, Collector Emitter Voltage V(Br)Ceo:600V, Transistor Case Rohs Compliant: Yes |Infineon FF200R06KE3HOSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $102.6000
  • 5 $99.8300
  • 10 $97.0500
  • 25 $95.6700
  • 50 $94.2800
  • 100 $88.7400
$88.7400 / $102.6000 Buy Now
DISTI # 448-FF200R06KE3HOSA1-ND
DigiKey IGBT MOD 600V 260A 680W Min Qty: 1 Lead time: 16 Weeks Container: Tray 15
In Stock
  • 1 $120.0200
  • 10 $111.0970
  • 30 $107.0427
  • 80 $102.1770
$102.1770 / $120.0200 Buy Now
DISTI # FF200R06KE3HOSA1
Avnet Americas Transistor IGBT Module N-CH 600V 260A 20V Screw Mount Tray - Trays (Alt: FF200R06KE3HOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray 0
  • 10 $124.4495
$124.4495 Buy Now
Future Electronics FF200R06KE3 Series 600 V 200 A 680 W Chassis Mount IGBT Module RoHS: Compliant pbFree: Yes Min Qty: 10 Package Multiple: 10 Container: Tray 0
Tray
  • 1 $110.2000
  • 3 $108.7000
  • 5 $108.0100
  • 20 $106.1500
  • 30 $104.9500
$104.9500 / $110.2000 Buy Now
Rochester Electronics FFXR06K3H - MEDIUM POWER 62MM RoHS: Compliant Status: Active Min Qty: 1 164
  • 1 $117.0900
  • 25 $114.7500
  • 100 $110.0600
  • 500 $105.3800
  • 1,000 $99.5300
$99.5300 / $117.0900 Buy Now
DISTI # FF200R06KE3HOSA1
Avnet Americas Transistor IGBT Module N-CH 600V 260A 20V Screw Mount Tray - Trays (Alt: FF200R06KE3HOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray 0
  • 10 $124.4495
$124.4495 Buy Now
Ameya Holding Limited   10
RFQ
DISTI # FF200R06KE3HOSA1
Avnet Americas Transistor IGBT Module N-CH 600V 260A 20V Screw Mount Tray - Trays (Alt: FF200R06KE3HOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray 0
  • 10 $124.4495
$124.4495 Buy Now
DISTI # SP000085283
EBV Elektronik Trans IGBT Module N-CH 600V 260A 7-pin 62MM-1 (Alt: SP000085283) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 2 Weeks, 3 Days EBV - 0
Buy Now
DISTI # 2839509
element14 Asia-Pacific IGBT, MODULE, N-CH, 600V, 260A RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $121.7158
  • 5 $115.1402
  • 10 $108.5572
  • 50 $103.6254
$103.6254 / $121.7158 Buy Now
DISTI # 2839509
Farnell IGBT, MODULE, N-CH, 600V, 260A RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Each 0
  • 1 $113.0164
  • 5 $104.6119
  • 10 $96.2075
$96.2075 / $113.0164 Buy Now

Part Details for FF200R06KE3HOSA1

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FF200R06KE3HOSA1 Part Data Attributes

FF200R06KE3HOSA1 Infineon Technologies AG
Buy Now Datasheet
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FF200R06KE3HOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 260A I(C), 600V V(BR)CES, N-Channel, MODULE-7
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description MODULE-7
Pin Count 7
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 260 A
Collector-Emitter Voltage-Max 600 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 600 ns
Turn-on Time-Nom (ton) 190 ns

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