Part Details for FF200R12KE3HOSA1 by Infineon Technologies AG
Overview of FF200R12KE3HOSA1 by Infineon Technologies AG
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- Number of Functional Equivalents:
- Part Data Attributes
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Price & Stock for FF200R12KE3HOSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
13AC8638
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Newark | Igbt, Module, N-Ch, 1.2Kv, 295A, Transistor Polarity:N Channel, Dc Collector Current:295A, Collector Emitter Saturation Voltage Vce(On):1.7V, Power Dissipation Pd:1.05Kw, Collector Emitter Voltage V(Br)Ceo:1.2Kv, Transistor Case Rohs Compliant: Yes |Infineon FF200R12KE3HOSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 21 |
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$127.1500 / $149.3500 | Buy Now |
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DISTI #
FF200R12KE3HOSA1-ND
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DigiKey | IGBT MODULE 1200V 1050W Min Qty: 1 Lead time: 16 Weeks Container: Tray |
14 In Stock |
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$133.1200 / $149.2600 | Buy Now |
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DISTI #
FF200R12KE3HOSA1
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Avnet Americas | Transistor IGBT Module N-CH 1200V 295A ±20V Screw Tray - Trays (Alt: FF200R12KE3HOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray | 0 |
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$154.7675 | Buy Now |
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Future Electronics | MEDIUM POWER 62MM RoHS: Compliant pbFree: Yes Min Qty: 10 Package Multiple: 10 Container: Tray | 0Tray |
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$130.5100 / $133.1600 | Buy Now |
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Rochester Electronics | MEDIUM POWER 62MM RoHS: Compliant Status: Active Min Qty: 1 | 225 |
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$123.7700 / $145.6100 | Buy Now |
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DISTI #
FF200R12KE3HOSA1
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Avnet Americas | Transistor IGBT Module N-CH 1200V 295A ±20V Screw Tray - Trays (Alt: FF200R12KE3HOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray | 0 |
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$154.7675 | Buy Now |
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DISTI #
FF200R12KE3
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TME | Module: IGBT, transistor/transistor, IGBT half-bridge, Ic: 200A Min Qty: 1 | 0 |
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$182.6800 / $262.8000 | RFQ |
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DISTI #
FF200R12KE3HOSA1
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Avnet Americas | Transistor IGBT Module N-CH 1200V 295A ±20V Screw Tray - Trays (Alt: FF200R12KE3HOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray | 0 |
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$154.7675 | Buy Now |
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DISTI #
SP000100735
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EBV Elektronik | Transistor IGBT Module N-CH 1200V 295A �20V Screw Tray (Alt: SP000100735) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 2 Weeks, 3 Days | EBV - 0 |
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Buy Now | |
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DISTI #
2726122
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element14 Asia-Pacific | IGBT, MODULE, N-CH, 1.2KV, 295A RoHS: Compliant Min Qty: 1 Container: Each | 21 |
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$147.5855 / $153.7282 | Buy Now |
Part Details for FF200R12KE3HOSA1
FF200R12KE3HOSA1 CAD Models
FF200R12KE3HOSA1 Part Data Attributes
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FF200R12KE3HOSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
FF200R12KE3HOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | MODULE | |
| Package Description | FLANGE MOUNT, R-XUFM-X7 | |
| Pin Count | 7 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 295 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| JESD-30 Code | R-XUFM-X7 | |
| Number of Elements | 2 | |
| Number of Terminals | 7 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 830 ns | |
| Turn-on Time-Nom (ton) | 400 ns |