Datasheets
FF200R12KE4PHOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-7

Part Details for FF200R12KE4PHOSA1 by Infineon Technologies AG

Overview of FF200R12KE4PHOSA1 by Infineon Technologies AG

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Price & Stock for FF200R12KE4PHOSA1

Part # Distributor Description Stock Price Buy
DISTI # 448-FF200R12KE4PHOSA1-ND
DigiKey IGBT MODULE 1200V 200A Min Qty: 8 Lead time: 16 Weeks Container: Tray Temporarily Out of Stock
  • 8 $112.9925
  • 16 $104.5938
  • 32 $100.7766
  • 80 $96.1959
$96.1959 / $112.9925 Buy Now
DISTI # FF200R12KE4PHOSA1
Avnet Americas Trans IGBT Module N-CH 1200V 200A 7-Pin 62MM-1 - Trays (Alt: FF200R12KE4PHOSA1) RoHS: Compliant Min Qty: 8 Package Multiple: 8 Lead time: 16 Weeks, 0 Days Container: Tray 0
  • 8 $117.1645
$117.1645 Buy Now
DISTI # 726-FF200R12KE4PHOSA
Mouser Electronics IGBT Modules MEDIUM POWER 62MM RoHS: Compliant 0
  • 8 $104.5900
  • 24 $100.7700
  • 56 $96.1900
$96.1900 / $104.5900 Order Now
Future Electronics 62 mm C-Series 1200 V 200 A Chassis Mount Trench Field Stop IGBT Module RoHS: Compliant pbFree: Yes Min Qty: 8 Package Multiple: 8 Container: Tray 0
Tray
  • 1 $103.7400
  • 3 $102.3300
  • 5 $101.6800
  • 20 $99.9300
  • 30 $98.8000
$98.8000 / $103.7400 Buy Now
Rochester Electronics FFXR12K4H - IGBT MOD 1.2kV 200A Module Tray RoHS: Compliant Status: Active Min Qty: 1 51
  • 1 $110.2400
  • 25 $108.0300
  • 100 $103.6200
  • 500 $99.2100
  • 1,000 $93.7000
$93.7000 / $110.2400 Buy Now
DISTI # FF200R12KE4PHOSA1
Avnet Americas Trans IGBT Module N-CH 1200V 200A 7-Pin 62MM-1 - Trays (Alt: FF200R12KE4PHOSA1) RoHS: Compliant Min Qty: 8 Package Multiple: 8 Lead time: 16 Weeks, 0 Days Container: Tray 0
  • 8 $117.1645
$117.1645 Buy Now
DISTI # FF200R12KE4P
TME Module: IGBT, transistor/transistor, IGBT half-bridge, Ic: 200A Min Qty: 1 0
  • 1 $135.6700
  • 3 $119.6500
  • 8 $107.9000
$107.9000 / $135.6700 RFQ
DISTI # FF200R12KE4PHOSA1
Avnet Americas Trans IGBT Module N-CH 1200V 200A 7-Pin 62MM-1 - Trays (Alt: FF200R12KE4PHOSA1) RoHS: Compliant Min Qty: 8 Package Multiple: 8 Lead time: 16 Weeks, 0 Days Container: Tray 0
  • 8 $117.1645
$117.1645 Buy Now
DISTI # SP001097392
EBV Elektronik Trans IGBT Module N-CH 1200V 200A 7-Pin 62MM-1 (Alt: SP001097392) RoHS: Compliant Min Qty: 8 Package Multiple: 8 Lead time: 2 Weeks, 3 Days EBV - 0
Buy Now

Part Details for FF200R12KE4PHOSA1

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FF200R12KE4PHOSA1 Part Data Attributes

FF200R12KE4PHOSA1 Infineon Technologies AG
Buy Now Datasheet
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FF200R12KE4PHOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-7
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-XUFM-X7
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector-Emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Reference Standard UL APPROVED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 800 ns
Turn-on Time-Nom (ton) 325 ns

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