Datasheets
FF200R12KT4HOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 320A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

Part Details for FF200R12KT4HOSA1 by Infineon Technologies AG

Overview of FF200R12KT4HOSA1 by Infineon Technologies AG

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Price & Stock for FF200R12KT4HOSA1

Part # Distributor Description Stock Price Buy
DISTI # 27X9041
Newark Igbt Array & Module Transistor, Dual Npn, 320 A, 1.75 V, 1.1 Kw, 1.2 Kv, Module Rohs Compliant: Yes |Infineon FF200R12KT4HOSA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $134.9800
  • 5 $129.9700
  • 10 $124.9600
  • 30 $122.6700
  • 50 $120.3900
  • 100 $114.9200
$114.9200 / $134.9800 Buy Now
DISTI # FF200R12KT4HOSA1-ND
DigiKey IGBT MOD 1200V 320A 1100W Min Qty: 1 Lead time: 16 Weeks Container: Tray Temporarily Out of Stock
  • 1 $111.6200
  • 10 $101.8980
  • 30 $97.2177
  • 80 $92.1766
$92.1766 / $111.6200 Buy Now
DISTI # FF200R12KT4HOSA1
Avnet Americas Transistor IGBT Module N-CH 1200V 320A 20V Screw Mount Tray - Trays (Alt: FF200R12KT4HOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 1 Lead time: 16 Weeks, 0 Days Container: Tray 0
  • 10 $110.5150
$110.5150 Buy Now
Future Electronics FF200R12KT4 Series 1200 V 320 A 1100 W Chassis Mount IGBT Module RoHS: Compliant pbFree: Yes Min Qty: 10 Package Multiple: 10 Container: Tray 10
Tray
  • 10 $72.5100
  • 20 $71.8500
  • 30 $71.1900
$71.1900 / $72.5100 Buy Now
Rochester Electronics FF200R12 - IGBT Module RoHS: Compliant Status: Active Min Qty: 1 3
  • 1 $103.9800
  • 25 $101.9000
  • 100 $97.7400
  • 500 $93.5800
  • 1,000 $88.3800
$88.3800 / $103.9800 Buy Now
DISTI # FF200R12KT4HOSA1
Avnet Americas Transistor IGBT Module N-CH 1200V 320A 20V Screw Mount Tray - Trays (Alt: FF200R12KT4HOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 1 Lead time: 16 Weeks, 0 Days Container: Tray 0
  • 10 $110.5150
$110.5150 Buy Now
DISTI # FF200R12KT4
TME Module: IGBT, transistor/transistor, IGBT half-bridge, Ic: 200A Min Qty: 1 0
  • 1 $182.6800
  • 3 $163.4500
  • 10 $152.7700
$152.7700 / $182.6800 RFQ
Ameya Holding Limited FF200R12KT4 Series 1200 V 320 A 1100 W Chassis Mount IGBT Module 48
RFQ
DISTI # FF200R12KT4HOSA1
Avnet Americas Transistor IGBT Module N-CH 1200V 320A 20V Screw Mount Tray - Trays (Alt: FF200R12KT4HOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 1 Lead time: 16 Weeks, 0 Days Container: Tray 0
  • 10 $110.5150
$110.5150 Buy Now
DISTI # SP000370618
EBV Elektronik Transistor IGBT Module N-CH 1200V 320A 20V Screw Mount Tray (Alt: SP000370618) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 2 Weeks, 3 Days EBV - 0
Buy Now
DISTI # 2377249
element14 Asia-Pacific IGBT MODULE, DUAL NPN, 1.75V, 320A RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $136.1882
  • 5 $126.0752
  • 10 $115.9548
$115.9548 / $136.1882 Buy Now
DISTI # 2377249
Farnell IGBT MODULE, DUAL NPN, 1.75V, 320A RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Each 0
  • 1 $129.6129
  • 5 $124.8050
  • 10 $119.9847
$119.9847 / $129.6129 Buy Now

Part Details for FF200R12KT4HOSA1

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FF200R12KT4HOSA1 Part Data Attributes

FF200R12KT4HOSA1 Infineon Technologies AG
Buy Now Datasheet
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FF200R12KT4HOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 320A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description MODULE-7
Pin Count 7
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 320 A
Collector-Emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 700 ns
Turn-on Time-Nom (ton) 680 ns

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