Datasheets
FF200R17KE3 by:

Insulated Gate Bipolar Transistor, 310A I(C), 1700V V(BR)CES, N-Channel, MODULE-7

Part Details for FF200R17KE3 by Infineon Technologies AG

Overview of FF200R17KE3 by Infineon Technologies AG

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Price & Stock for FF200R17KE3

Part # Distributor Description Stock Price Buy
DISTI # 641-FF200R17KE3
Mouser Electronics IGBT Modules N-CH 1.7KV 390A RoHS: Compliant 8
  • 1 $182.5300
  • 10 $170.9000
  • 20 $164.5300
$164.5300 / $182.5300 Buy Now

Part Details for FF200R17KE3

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FF200R17KE3 Part Data Attributes

FF200R17KE3 Infineon Technologies AG
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FF200R17KE3 Infineon Technologies AG Insulated Gate Bipolar Transistor, 310A I(C), 1700V V(BR)CES, N-Channel, MODULE-7
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description FLANGE MOUNT, R-XUFM-X7
Pin Count 7
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 390 A
Collector-Emitter Voltage-Max 1700 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1250 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1200 ns
Turn-on Time-Nom (ton) 400 ns
VCEsat-Max 2.45 V

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