Datasheets
FF200R17KE4 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 310A I(C), 1700V V(BR)CES, N-Channel, MODULE-7

Part Details for FF200R17KE4 by Infineon Technologies AG

Overview of FF200R17KE4 by Infineon Technologies AG

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Price & Stock for FF200R17KE4

Part # Distributor Description Stock Price Buy
DISTI # 641-FF200R17KE4
Mouser Electronics IGBT Modules IGBT Module 200A 1700V RoHS: Compliant 33
  • 1 $137.6900
  • 10 $122.9800
  • 20 $120.9100
  • 50 $117.2400
$117.2400 / $137.6900 Buy Now
DISTI # FF200R17KE4
TME Module: IGBT, transistor/transistor, IGBT half-bridge, Ic: 200A Min Qty: 1 4
  • 1 $229.6800
  • 3 $207.2500
  • 10 $193.3600
$193.3600 / $229.6800 Buy Now
MacroQuest Electronics   8
RFQ

Part Details for FF200R17KE4

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FF200R17KE4 Part Data Attributes

FF200R17KE4 Infineon Technologies AG
Buy Now Datasheet
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FF200R17KE4 Infineon Technologies AG Insulated Gate Bipolar Transistor, 310A I(C), 1700V V(BR)CES, N-Channel, MODULE-7
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description FLANGE MOUNT, R-XUFM-X5
Pin Count 7
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 310 A
Collector-Emitter Voltage-Max 1700 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 Code R-XUFM-X5
Number of Elements 2
Number of Terminals 5
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1400 ns
Turn-on Time-Nom (ton) 365 ns

Alternate Parts for FF200R17KE4

This table gives cross-reference parts and alternative options found for FF200R17KE4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FF200R17KE4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSM200GB170DLC Insulated Gate Bipolar Transistor, 400A I(C), 1700V V(BR)CES, N-Channel, Infineon Technologies AG FF200R17KE4 vs BSM200GB170DLC
Part Number Description Manufacturer Compare
BSM200GA170DN2 Insulated Gate Bipolar Transistor, 290A I(C), 1700V V(BR)CES, N-Channel Siemens FF200R17KE4 vs BSM200GA170DN2
BSM300GA170DN2E3166 Insulated Gate Bipolar Transistor, 440A I(C), 1700V V(BR)CES, N-Channel Siemens FF200R17KE4 vs BSM300GA170DN2E3166
CM400HA-34H Insulated Gate Bipolar Transistor, 400A I(C), 1700V V(BR)CES, N-Channel Powerex Power Semiconductors FF200R17KE4 vs CM400HA-34H
BSM150GB170DLCHOSA1 Insulated Gate Bipolar Transistor, 300A I(C), 1700V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG FF200R17KE4 vs BSM150GB170DLCHOSA1
BSM100GB170DN2 Insulated Gate Bipolar Transistor, 145A I(C), 1700V V(BR)CES, N-Channel, Siemens FF200R17KE4 vs BSM100GB170DN2
BSM200GB170DLC Insulated Gate Bipolar Transistor, 400A I(C), 1700V V(BR)CES, N-Channel, Infineon Technologies AG FF200R17KE4 vs BSM200GB170DLC
FF150R17KE4HOSA1 Insulated Gate Bipolar Transistor, 250A I(C), 1700V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG FF200R17KE4 vs FF150R17KE4HOSA1

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