Datasheets
FF200R17KE4HOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 310A I(C), 1700V V(BR)CES, N-Channel, MODULE-7

Part Details for FF200R17KE4HOSA1 by Infineon Technologies AG

Overview of FF200R17KE4HOSA1 by Infineon Technologies AG

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Price & Stock for FF200R17KE4HOSA1

Part # Distributor Description Stock Price Buy
DISTI # 27X9042
Newark Igbt Array & Module Transistor, Dual Npn, 310 A, 1.95 V, 1.25 Kw, 1.7 Kv, Module Rohs Compliant: Yes |Infineon FF200R17KE4HOSA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $200.9600
$200.9600 Buy Now
DISTI # 448-FF200R17KE4HOSA1-ND
DigiKey IGBT MOD 1700V 310A 1250W Min Qty: 1 Lead time: 16 Weeks Container: Tray Temporarily Out of Stock
  • 1 $135.5800
  • 10 $125.5020
  • 30 $120.9213
  • 80 $115.4249
$115.4249 / $135.5800 Buy Now
DISTI # FF200R17KE4HOSA1
Avnet Americas Transistor IGBT Module N-CH 1700V 310A 20V Screw Mount Tray - Trays (Alt: FF200R17KE4HOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray 0
  • 10 $140.5850
$140.5850 Buy Now
DISTI # 726-FF200R17KE4HOSA1
Mouser Electronics IGBT Modules MEDIUM POWER 62MM RoHS: Compliant 19
  • 1 $138.3000
  • 10 $134.5000
  • 20 $120.9200
  • 50 $115.4200
$115.4200 / $138.3000 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 10 Package Multiple: 10 Container: Tray 0
Tray
  • 10 $127.7500
$127.7500 Buy Now
DISTI # FF200R17KE4HOSA1
Avnet Americas Transistor IGBT Module N-CH 1700V 310A 20V Screw Mount Tray - Trays (Alt: FF200R17KE4HOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray 0
  • 10 $140.5850
$140.5850 Buy Now
DISTI # FF200R17KE4
TME Module: IGBT, transistor/transistor, IGBT half-bridge, Ic: 200A Min Qty: 1 4
  • 1 $229.6800
  • 3 $207.2500
  • 10 $193.3600
$193.3600 / $229.6800 Buy Now
Ameya Holding Limited   Min Qty: 10 10
  • 10 $309.8477
  • 20 $299.8949
$299.8949 / $309.8477 Buy Now
DISTI # FF200R17KE4HOSA1
Avnet Americas Transistor IGBT Module N-CH 1700V 310A 20V Screw Mount Tray - Trays (Alt: FF200R17KE4HOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray 0
  • 10 $140.5850
$140.5850 Buy Now
DISTI # SP000713374
EBV Elektronik Transistor IGBT Module N-CH 1700V 310A 20V Screw Mount Tray (Alt: SP000713374) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 2 Weeks, 3 Days EBV - 10
Buy Now
DISTI # 2377250
element14 Asia-Pacific IGBT MODULE, DUAL NPN, 1.95V, 310A RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $168.4207
  • 5 $157.9407
  • 10 $147.4607
$147.4607 / $168.4207 Buy Now
DISTI # 2377250
Farnell IGBT MODULE, DUAL NPN, 1.95V, 310A RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Each 0
  • 1 $160.2959
  • 5 $151.8415
  • 10 $143.3747
$143.3747 / $160.2959 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 10 10
  • 10 $176.1700
$176.1700 Buy Now

Part Details for FF200R17KE4HOSA1

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FF200R17KE4HOSA1 Part Data Attributes

FF200R17KE4HOSA1 Infineon Technologies AG
Buy Now Datasheet
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FF200R17KE4HOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 310A I(C), 1700V V(BR)CES, N-Channel, MODULE-7
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description FLANGE MOUNT, R-XUFM-X5
Pin Count 7
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 310 A
Collector-Emitter Voltage-Max 1700 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 Code R-XUFM-X5
Number of Elements 2
Number of Terminals 5
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1400 ns
Turn-on Time-Nom (ton) 365 ns

Alternate Parts for FF200R17KE4HOSA1

This table gives cross-reference parts and alternative options found for FF200R17KE4HOSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FF200R17KE4HOSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSM200GB170DLC Insulated Gate Bipolar Transistor, 400A I(C), 1700V V(BR)CES, N-Channel, Infineon Technologies AG FF200R17KE4HOSA1 vs BSM200GB170DLC
FF200R17KE4 Insulated Gate Bipolar Transistor, 310A I(C), 1700V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG FF200R17KE4HOSA1 vs FF200R17KE4
Part Number Description Manufacturer Compare
BSM200GA170DN2 Insulated Gate Bipolar Transistor, 290A I(C), 1700V V(BR)CES, N-Channel Siemens FF200R17KE4HOSA1 vs BSM200GA170DN2
BSM300GA170DN2E3166 Insulated Gate Bipolar Transistor, 440A I(C), 1700V V(BR)CES, N-Channel Siemens FF200R17KE4HOSA1 vs BSM300GA170DN2E3166
CM400HA-34H Insulated Gate Bipolar Transistor, 400A I(C), 1700V V(BR)CES, N-Channel Powerex Power Semiconductors FF200R17KE4HOSA1 vs CM400HA-34H
BSM150GB170DLCHOSA1 Insulated Gate Bipolar Transistor, 300A I(C), 1700V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG FF200R17KE4HOSA1 vs BSM150GB170DLCHOSA1
FF200R17KE4 Insulated Gate Bipolar Transistor, 310A I(C), 1700V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG FF200R17KE4HOSA1 vs FF200R17KE4
BSM100GB170DN2 Insulated Gate Bipolar Transistor, 145A I(C), 1700V V(BR)CES, N-Channel, Siemens FF200R17KE4HOSA1 vs BSM100GB170DN2
BSM200GB170DLC Insulated Gate Bipolar Transistor, 400A I(C), 1700V V(BR)CES, N-Channel, Infineon Technologies AG FF200R17KE4HOSA1 vs BSM200GB170DLC
FF150R17KE4HOSA1 Insulated Gate Bipolar Transistor, 250A I(C), 1700V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG FF200R17KE4HOSA1 vs FF150R17KE4HOSA1

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