Part Details for FF200R33KF2CNOSA1 by Infineon Technologies AG
Overview of FF200R33KF2CNOSA1 by Infineon Technologies AG
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- Number of Functional Equivalents:
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Price & Stock for FF200R33KF2CNOSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC8642
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Newark | Igbt, Module, N-Ch, 3.3Kv, 330A, Continuous Collector Current:330A, Collector Emitter Saturation Voltage:3.4V, Power Dissipation:2.2Kw, Operating Temperature Max:125°C, Igbt Termination:Tab, Collector Emitter Voltage Max:3.3Kv Rohs Compliant: No |Infineon FF200R33KF2CNOSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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Rochester Electronics | FF200R33 - IGBT Module RoHS: Not Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 2 |
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$1,085.2700 / $1,276.7900 | Buy Now |
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DISTI #
2726126
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element14 Asia-Pacific | RoHS: Not Compliant Min Qty: 1 Container: Each | 0 |
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$1,702.0696 | Buy Now |
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DISTI #
2726126
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Farnell | RoHS: Not Compliant Min Qty: 1 Container: Each | 0 |
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$634.8897 | Buy Now |
Part Details for FF200R33KF2CNOSA1
FF200R33KF2CNOSA1 CAD Models
FF200R33KF2CNOSA1 Part Data Attributes
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FF200R33KF2CNOSA1
Infineon Technologies AG
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Datasheet
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FF200R33KF2CNOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 330A I(C), 3300V V(BR)CES, N-Channel, MODULE-8
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | MODULE | |
| Package Description | MODULE-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 330 A | |
| Collector-Emitter Voltage-Max | 3300 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X8 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2200 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 1900 ns | |
| Turn-on Time-Nom (ton) | 480 ns | |
| VCEsat-Max | 4.25 V |