Datasheets
FF600R17KE3NOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 900A I(C), 1700V V(BR)CES, N-Channel, MODULE-10

Part Details for FF600R17KE3NOSA1 by Infineon Technologies AG

Overview of FF600R17KE3NOSA1 by Infineon Technologies AG

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Price & Stock for FF600R17KE3NOSA1

Part # Distributor Description Stock Price Buy
DISTI # 2156-FF600R17KE3NOSA1-ND
DigiKey IGBT MODULE 1700V 600A Min Qty: 1 Lead time: 14 Weeks Container: Bulk MARKETPLACE PRODUCT 4
In Stock
  • 1 $840.3800
$840.3800 Buy Now
DISTI # 448-FF600R17KE3NOSA1-ND
DigiKey IGBT MODULE 1700V 600A Min Qty: 1 Lead time: 14 Weeks Container: Tray Limited Supply - Call
  • 2 $758.0250
  • 10 $731.5840
$731.5840 / $758.0250 Buy Now
Rochester Electronics FF600R17KE3N - IGBT MOD 1.2kV 60A Tray RoHS: Not Compliant Status: Not Recommended for New Designs Min Qty: 1 4
  • 1 $848.4600
  • 25 $831.4900
  • 100 $797.5500
  • 500 $763.6100
  • 1,000 $721.1900
$721.1900 / $848.4600 Buy Now
DISTI # SP000100584
EBV Elektronik Trans IGBT Module N-CH 1.7KV 900A 10-pin IHM130-2 (Alt: SP000100584) RoHS: Not Compliant Min Qty: 2 Package Multiple: 2 Lead time: 2 Weeks, 1 Days EBV - 0
Buy Now

Part Details for FF600R17KE3NOSA1

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FF600R17KE3NOSA1 Part Data Attributes

FF600R17KE3NOSA1 Infineon Technologies AG
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FF600R17KE3NOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 900A I(C), 1700V V(BR)CES, N-Channel, MODULE-10
Pbfree Code No
Rohs Code No
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description MODULE-10
Pin Count 10
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection ISOLATED
Collector Current-Max (IC) 900 A
Collector-Emitter Voltage-Max 1700 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 Code R-XUFM-X10
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 10
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1900 ns
Turn-on Time-Nom (ton) 900 ns

Alternate Parts for FF600R17KE3NOSA1

This table gives cross-reference parts and alternative options found for FF600R17KE3NOSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FF600R17KE3NOSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FF600R17KE3 Insulated Gate Bipolar Transistor, 900A I(C), 1700V V(BR)CES, N-Channel, MODULE-10 Infineon Technologies AG FF600R17KE3NOSA1 vs FF600R17KE3
Part Number Description Manufacturer Compare
FF600R17KE3B2NOSA1 Insulated Gate Bipolar Transistor, 950A I(C), 1700V V(BR)CES, N-Channel, MODULE-10 Infineon Technologies AG FF600R17KE3NOSA1 vs FF600R17KE3B2NOSA1
FF600R17KE3 Insulated Gate Bipolar Transistor, 900A I(C), 1700V V(BR)CES, N-Channel, MODULE-10 Infineon Technologies AG FF600R17KE3NOSA1 vs FF600R17KE3
FF600R17KE3_B2 Insulated Gate Bipolar Transistor, 950A I(C), 1700V V(BR)CES, N-Channel, MODULE-10 Infineon Technologies AG FF600R17KE3NOSA1 vs FF600R17KE3_B2

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