Part Details for FGA70N30TDTU by Fairchild Semiconductor Corporation
Overview of FGA70N30TDTU by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for FGA70N30TDTU
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | Insulated Gate Bipolar Transistor, 40A, 300V, N-Channel ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 660 |
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$1.5100 / $1.7700 | Buy Now |
Part Details for FGA70N30TDTU
FGA70N30TDTU CAD Models
FGA70N30TDTU Part Data Attributes
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FGA70N30TDTU
Fairchild Semiconductor Corporation
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Datasheet
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FGA70N30TDTU
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 40A I(C), 300V V(BR)CES, N-Channel, ROHS COMPLIANT, TO-3PN, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-3PN | |
Package Description | ROHS COMPLIANT, TO-3PN, 3 PIN | |
Pin Count | 2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | LOW CONDUCTION LOSS | |
Collector Current-Max (IC) | 40 A | |
Collector-Emitter Voltage-Max | 300 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 300 ns | |
Gate-Emitter Thr Voltage-Max | 5.5 V | |
Gate-Emitter Voltage-Max | 30 V | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 201 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 420 ns | |
Turn-on Time-Nom (ton) | 120 ns |