Part Details for FGB3040CS by onsemi
Overview of FGB3040CS by onsemi
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- Number of Functional Equivalents:
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Applications
Industrial Automation
Electronic Manufacturing
Price & Stock for FGB3040CS
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
61M2360
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Newark | Insulated-Gate Bibolar Transistor, Dc Collector Current:21A, Collector Emitter Voltage Vces:430V, Power Dissipation Pd:150W, Collector Emitter Voltage V(Br)Ceo:430V, No. Of Pins:6, Collector Emitter Saturation Voltage Vce(Sat):1.6V Rohs Compliant: Yes |Onsemi FGB3040CS Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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Rochester Electronics | FGB3040CS_F085 - Insulated Gate Bipolar Transistor, 21A, 430V, N-Channel RoHS: Compliant Status: Active Min Qty: 1 | 36795 |
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$1.6900 / $1.9900 | Buy Now |
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DISTI #
3615745
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Farnell | IGBT SINGLE TRANSISTOR RoHS: Compliant Min Qty: 800 Lead time: 31 Weeks, 1 Days Container: Reel | 0 |
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$2.1863 | Buy Now |
Part Details for FGB3040CS
FGB3040CS CAD Models
FGB3040CS Part Data Attributes
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FGB3040CS
onsemi
Buy Now
Datasheet
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Compare Parts:
FGB3040CS
onsemi
IGBT, 430V, 19A, 1.6V, 300mJ, D2PAK, Current Sensing EcoSPARK® I, N-Channel Ignition, 800-REEL, Automotive Qualified
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Manufacturer Package Code | 418AX | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Collector Current-Max (IC) | 21 A | |
| Collector-Emitter Voltage-Max | 430 V | |
| Configuration | SINGLE | |
| Fall Time-Max (tf) | 15000 ns | |
| Gate-Emitter Thr Voltage-Max | 2.2 V | |
| Gate-Emitter Voltage-Max | 12 V | |
| JESD-30 Code | R-PSSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 7000 ns | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 7300 ns | |
| Turn-on Time-Nom (ton) | 2100 ns |