Datasheets
FP20R06W1E3B11BOMA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, MODULE-23

Part Details for FP20R06W1E3B11BOMA1 by Infineon Technologies AG

Overview of FP20R06W1E3B11BOMA1 by Infineon Technologies AG

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Price & Stock for FP20R06W1E3B11BOMA1

Part # Distributor Description Stock Price Buy
DISTI # 448-FP20R06W1E3B11BOMA1-ND
DigiKey IGBT MODULE 600V 27A 94W Min Qty: 1 Lead time: 26 Weeks Container: Tray 17
In Stock
  • 1 $41.4400
  • 24 $36.9229
  • 48 $34.7238
  • 96 $32.4089
  • 240 $31.2514
$31.2514 / $41.4400 Buy Now
DISTI # FP20R06W1E3B11BOMA
Avnet Americas LOW POWER EASY - Trays (Alt: FP20R06W1E3B11BOMA) RoHS: Compliant Min Qty: 24 Package Multiple: 24 Lead time: 26 Weeks, 0 Days Container: Tray 0
  • 24 $35.5260
$35.5260 Buy Now
Rochester Electronics FP20R06W1E3_B11 - Low Power Easy RoHS: Compliant Status: Active Min Qty: 1 92
  • 1 $33.4300
  • 25 $32.7600
  • 100 $31.4200
  • 500 $30.0800
  • 1,000 $28.4100
$28.4100 / $33.4300 Buy Now
DISTI # FP20R06W1E3B11BOMA
Avnet Americas LOW POWER EASY - Trays (Alt: FP20R06W1E3B11BOMA) RoHS: Compliant Min Qty: 24 Package Multiple: 24 Lead time: 26 Weeks, 0 Days Container: Tray 0
  • 24 $35.5260
$35.5260 Buy Now
DISTI # FP20R06W1E3B11
TME Module: IGBT, diode/transistor, buck chopper, Urmax: 600V, Ic: 20A Min Qty: 1 0
  • 1 $69.6800
  • 3 $60.1600
  • 10 $48.2800
$48.2800 / $69.6800 RFQ
Ameya Holding Limited   4
RFQ
DISTI # SP000790726
EBV Elektronik Trans IGBT Module N-CH 600V 27A 23-pin EASY1B-2 (Alt: SP000790726) RoHS: Compliant Min Qty: 24 Package Multiple: 24 Lead time: 3 Weeks, 6 Days EBV - 0
Buy Now

Part Details for FP20R06W1E3B11BOMA1

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FP20R06W1E3B11BOMA1 Part Data Attributes:

FP20R06W1E3B11BOMA1 Infineon Technologies AG
Buy Now Datasheet
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FP20R06W1E3B11BOMA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, MODULE-23
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-XUFM-X23
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 26 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 27 A
Collector-Emitter Voltage-Max 600 V
Configuration COMPLEX
JESD-30 Code R-XUFM-X23
Number of Elements 7
Number of Terminals 23
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Reference Standard UL APPROVED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 250 ns
Turn-on Time-Nom (ton) 37 ns

Alternate Parts for FP20R06W1E3B11BOMA1

This table gives cross-reference parts and alternative options found for FP20R06W1E3B11BOMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FP20R06W1E3B11BOMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FP20R06W1E3BOMA1 Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, MODULE-23 Infineon Technologies AG FP20R06W1E3B11BOMA1 vs FP20R06W1E3BOMA1
FP20R06W1E3_B11 Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, MODULE-23 Infineon Technologies AG FP20R06W1E3B11BOMA1 vs FP20R06W1E3_B11
Part Number Description Manufacturer Compare
FP20R06W1E3BOMA1 Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, MODULE-23 Infineon Technologies AG FP20R06W1E3B11BOMA1 vs FP20R06W1E3BOMA1
FB10R06KL4G Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, Infineon Technologies AG FP20R06W1E3B11BOMA1 vs FB10R06KL4G
FP10R06W1E3_B11 Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, MODULE-23 Infineon Technologies AG FP20R06W1E3B11BOMA1 vs FP10R06W1E3_B11
FP10R06YE3_B4 Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, MODULE-24 Infineon Technologies AG FP20R06W1E3B11BOMA1 vs FP10R06YE3_B4
FP10R06W1E3 Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, MODULE-23 Infineon Technologies AG FP20R06W1E3B11BOMA1 vs FP10R06W1E3
FP10R06YE3 Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, MODULE-23 Infineon Technologies AG FP20R06W1E3B11BOMA1 vs FP10R06YE3
FP20R06YE3 Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, MODULE-23 Infineon Technologies AG FP20R06W1E3B11BOMA1 vs FP20R06YE3
FP10R06KL4 Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, MODULE-23 Infineon Technologies AG FP20R06W1E3B11BOMA1 vs FP10R06KL4
FP20R06W1E3_B11 Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, MODULE-23 Infineon Technologies AG FP20R06W1E3B11BOMA1 vs FP20R06W1E3_B11
FB10R06W1E3BOMA1 Insulated Gate Bipolar Transistor, 18A I(C), 600V V(BR)CES, N-Channel, MODULE-23 Infineon Technologies AG FP20R06W1E3B11BOMA1 vs FB10R06W1E3BOMA1

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