Datasheets
FP30R06W1E3BOMA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 37A I(C), 600V V(BR)CES, N-Channel, MODULE-23

Part Details for FP30R06W1E3BOMA1 by Infineon Technologies AG

Overview of FP30R06W1E3BOMA1 by Infineon Technologies AG

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Applications Industrial Automation Energy and Power Systems Renewable Energy Robotics and Drones Motor control systems

Price & Stock for FP30R06W1E3BOMA1

Part # Distributor Description Stock Price Buy
DISTI # 13AC8732
Newark Igbt, Module, N-Ch, 600V, 37A, Continuous Collector Current:37A, Collector Emitter Saturation Voltage:1.55V, Power Dissipation:115W, Operating Temperature Max:150°C, Igbt Termination:Press Fit, Collector Emitter Voltage Max:600V Rohs Compliant: Yes |Infineon FP30R06W1E3BOMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 140
  • 1 $47.0400
  • 5 $45.3300
  • 10 $43.6300
  • 48 $41.9200
  • 72 $39.4300
  • 120 $36.8000
  • 264 $35.4700
$35.4700 / $47.0400 Buy Now
DISTI # FP30R06W1E3BOMA1-ND
DigiKey IGBT MODULE 600V 37A 115W Min Qty: 1 Lead time: 26 Weeks Container: Tray 30
In Stock
  • 1 $41.1500
  • 24 $36.6654
  • 48 $34.4815
  • 96 $32.1826
  • 240 $31.0332
$31.0332 / $41.1500 Buy Now
DISTI # FP30R06W1E3BOMA1
Avnet Americas Trans IGBT Module N-CH 600V 37A 23-Pin EASY1B - Trays (Alt: FP30R06W1E3BOMA1) RoHS: Compliant Min Qty: 24 Package Multiple: 24 Lead time: 26 Weeks, 0 Days Container: Tray 0
  • 24 $35.2780
$35.2780 Buy Now
DISTI # FP30R06W1E3BOMA1
Avnet Americas Trans IGBT Module N-CH 600V 37A 23-Pin EASY1B - Trays (Alt: FP30R06W1E3BOMA1) RoHS: Compliant Min Qty: 24 Package Multiple: 24 Lead time: 26 Weeks, 0 Days Container: Tray 0
  • 24 $35.2780
$35.2780 Buy Now
Ameya Holding Limited   Min Qty: 1 70
  • 1 $50.6303
  • 2 $49.6149
  • 3 $48.6335
  • 4 $47.6486
  • 5 $46.6960
$46.6960 / $50.6303 Buy Now
DISTI # FP30R06W1E3BOMA1
Avnet Americas Trans IGBT Module N-CH 600V 37A 23-Pin EASY1B - Trays (Alt: FP30R06W1E3BOMA1) RoHS: Compliant Min Qty: 24 Package Multiple: 24 Lead time: 26 Weeks, 0 Days Container: Tray 0
  • 24 $35.2780
$35.2780 Buy Now
DISTI # SP000221202
EBV Elektronik IGBT Module, PIM Three Phase Input Rectifier, 37 A, 1.55 V, 115 W, 150 �C, Module (Alt: SP000221202) RoHS: Compliant Min Qty: 24 Package Multiple: 24 Lead time: 3 Weeks, 6 Days EBV - 24
Buy Now
DISTI # 2726162
element14 Asia-Pacific IGBT, MODULE, N-CH, 600V, 37A RoHS: Compliant Min Qty: 1 Container: Each 140
  • 1 $41.8763
  • 5 $38.6217
  • 10 $35.3597
  • 50 $34.8014
  • 100 $34.2357
$34.2357 / $41.8763 Buy Now
DISTI # 2726162
Farnell IGBT, MODULE, N-CH, 600V, 37A RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Each 140
  • 1 $40.0655
  • 5 $36.9546
  • 10 $33.8312
  • 50 $33.2667
  • 100 $32.7022
$32.7022 / $40.0655 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 24 48
  • 24 $60.1000
  • 48 $55.9200
$55.9200 / $60.1000 Buy Now

Part Details for FP30R06W1E3BOMA1

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FP30R06W1E3BOMA1 Part Data Attributes

FP30R06W1E3BOMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
FP30R06W1E3BOMA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 37A I(C), 600V V(BR)CES, N-Channel, MODULE-23
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description FLANGE MOUNT, R-XUFM-X23
Pin Count 23
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 37 A
Collector-Emitter Voltage-Max 600 V
Configuration COMPLEX
JESD-30 Code R-XUFM-X23
Number of Elements 7
Number of Terminals 23
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 245 ns
Turn-on Time-Nom (ton) 42 ns

Alternate Parts for FP30R06W1E3BOMA1

This table gives cross-reference parts and alternative options found for FP30R06W1E3BOMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FP30R06W1E3BOMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FP30R06W1E3 Insulated Gate Bipolar Transistor, 37A I(C), 600V V(BR)CES, N-Channel, MODULE-23 Infineon Technologies AG FP30R06W1E3BOMA1 vs FP30R06W1E3
FP30R06W1E3B11BOMA1 Insulated Gate Bipolar Transistor, 37A I(C), 600V V(BR)CES, N-Channel, MODULE-23 Infineon Technologies AG FP30R06W1E3BOMA1 vs FP30R06W1E3B11BOMA1
FP30R06W1E3_B11 Insulated Gate Bipolar Transistor, 37A I(C), 600V V(BR)CES, N-Channel, MODULE-23 Infineon Technologies AG FP30R06W1E3BOMA1 vs FP30R06W1E3_B11
Part Number Description Manufacturer Compare
FB30R06W1E3BOMA1 Insulated Gate Bipolar Transistor, 39A I(C), 600V V(BR)CES, N-Channel, MODULE-23 Infineon Technologies AG FP30R06W1E3BOMA1 vs FB30R06W1E3BOMA1
FP30R06W1E3B11BOMA1 Insulated Gate Bipolar Transistor, 37A I(C), 600V V(BR)CES, N-Channel, MODULE-23 Infineon Technologies AG FP30R06W1E3BOMA1 vs FP30R06W1E3B11BOMA1
FP30R06W1E3_B11 Insulated Gate Bipolar Transistor, 37A I(C), 600V V(BR)CES, N-Channel, MODULE-23 Infineon Technologies AG FP30R06W1E3BOMA1 vs FP30R06W1E3_B11
FP30R06W1E3 Insulated Gate Bipolar Transistor, 37A I(C), 600V V(BR)CES, N-Channel, MODULE-23 Infineon Technologies AG FP30R06W1E3BOMA1 vs FP30R06W1E3

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