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Transistors / Power Field-Effect Transistors / FQA13N80-F109
Datasheets
FQA13N80-F109 by:

Power MOSFET, N-Channel, QFET®, 800 V, 12.6 A, 750 mΩ, TO-3P, TO-3PN 3L, 450-TUBE

Part Details for FQA13N80-F109 by onsemi

Overview of FQA13N80-F109 by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for FQA13N80-F109

Part # Distributor Description Stock Price Buy
DISTI # 48AC1156
Newark Qf 800V 750Mohm To3Pn/Tube |Onsemi FQA13N80-F109 Min Qty: 450 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 250 $3.0700
  • 500 $2.9800
$2.9800 / $3.0700 Buy Now
DISTI # FQA13N80-F109-ND
DigiKey MOSFET N-CH 800V 12.6A TO3PN Min Qty: 1 Lead time: 28 Weeks Container: Tube 56
In Stock
  • 1 $5.9900
  • 30 $4.7483
  • 120 $4.0699
  • 510 $3.6178
  • 1,020 $3.0977
  • 2,010 $2.9168
$2.9168 / $5.9900 Buy Now
DISTI # FQA13N80-F109
Avnet Americas Trans MOSFET N-CH 800V 12.6A 3-Pin(3+Tab) TO-3PN T/R - Rail/Tube (Alt: FQA13N80-F109) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 28 Weeks, 0 Days Container: Tube 0
  • 450 $3.3580
  • 900 $3.2685
  • 1,800 $3.1789
  • 2,700 $3.0894
  • 3,600 $2.9999
$2.9999 / $3.3580 Buy Now
DISTI # 512-FQA13N80_F109
Mouser Electronics MOSFET TO-3P N-CH 600V RoHS: Compliant 468
  • 1 $5.9900
  • 10 $5.8800
  • 25 $4.4900
  • 100 $4.0700
  • 450 $3.6200
$3.6200 / $5.9900 Buy Now
Future Electronics Single N-Channel 800 V 0.75 Ohm 88 nC 300 W DMOS Flange Mount Mosfet - TO-3PN RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $3.3700
  • 90 $3.2800
  • 300 $3.1900
  • 600 $3.1400
  • 1,200 $3.0400
$3.0400 / $3.3700 Buy Now
Future Electronics Single N-Channel 800 V 0.75 Ohm 88 nC 300 W DMOS Flange Mount Mosfet - TO-3PN RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $3.3700
  • 90 $3.2800
  • 300 $3.1900
  • 600 $3.1400
  • 1,200 $3.0400
$3.0400 / $3.3700 Buy Now
Future Electronics Single N-Channel 800 V 0.75 Ohm 88 nC 300 W DMOS Flange Mount Mosfet - TO-3PN RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $3.3700
  • 90 $3.2800
  • 300 $3.1900
  • 600 $3.1400
  • 1,200 $3.0400
$3.0400 / $3.3700 Buy Now
Rochester Electronics Power Field-Effect Transistor, 12.6A, 800V, 0.75ohm, N-Channel, MOSFET RoHS: Compliant Status: Active Min Qty: 1 12500
  • 1 $3.2600
  • 25 $3.2000
  • 100 $3.0700
  • 500 $2.9400
  • 1,000 $2.7800
$2.7800 / $3.2600 Buy Now
DISTI # FQA13N80-F109
TME Transistor: N-MOSFET, unipolar, 800V, 8A, Idm: 50.4A, 300W, TO3PN Min Qty: 1 28
  • 1 $4.0600
  • 5 $3.6500
  • 30 $3.2200
  • 150 $2.9000
  • 450 $2.7000
$2.7000 / $4.0600 Buy Now
Chip 1 Exchange INSTOCK 19303
RFQ
DISTI # FQA13N80-F109
Avnet Silica Trans MOSFET N-CH 800V 12.6A 3-Pin(3+Tab) TO-3PN T/R (Alt: FQA13N80-F109) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 29 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FQA13N80-F109
EBV Elektronik Trans MOSFET N-CH 800V 12.6A 3-Pin(3+Tab) TO-3PN T/R (Alt: FQA13N80-F109) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 30 Weeks, 0 Days EBV - 0
Buy Now
New Advantage Corporation Single N-Channel 800 V 0.75 Ohm 88 nC 300 W DMOS Flange Mount Mosfet - TO-3PN RoHS: Compliant Min Qty: 1 Package Multiple: 30 150
  • 60 $4.0000
  • 150 $3.7300
$3.7300 / $4.0000 Buy Now
Sense Electronic Company Limited TO-3P 9000
RFQ
Wuhan P&S 800V, 12.6A, 750m?, N-Channel Power MOSFET, QFET Min Qty: 1 14749
  • 1 $7.8100
  • 100 $4.9900
  • 500 $4.1100
  • 1,000 $3.7800
$3.7800 / $7.8100 Buy Now

Part Details for FQA13N80-F109

FQA13N80-F109 CAD Models

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FQA13N80-F109 Part Data Attributes:

Parametric Data
FQA13N80-F109 onsemi
Buy Now Datasheet
Compare Parts:
FQA13N80-F109 onsemi Power MOSFET, N-Channel, QFET®, 800 V, 12.6 A, 750 mΩ, TO-3P, TO-3PN 3L, 450-TUBE
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code TO-3PN 3L
Package Description TO-3PN, 3 PIN
Manufacturer Package Code 340BZ
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 1100 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 12.6 A
Drain-source On Resistance-Max 0.75 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 300 W
Pulsed Drain Current-Max (IDM) 50.4 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQA13N80-F109

This table gives cross-reference parts and alternative options found for FQA13N80-F109. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQA13N80-F109, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APT8075BVR Power Field-Effect Transistor, 12A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, Microsemi Corporation FQA13N80-F109 vs APT8075BVR
APT8075BVRG Power Field-Effect Transistor, 12A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 Microchip Technology Inc FQA13N80-F109 vs APT8075BVRG
APT8075BVRG Power Field-Effect Transistor, 12A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, Microsemi Corporation FQA13N80-F109 vs APT8075BVRG

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