Datasheets
FS50R06W1E3BOMA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, MODULE-22

Part Details for FS50R06W1E3BOMA1 by Infineon Technologies AG

Overview of FS50R06W1E3BOMA1 by Infineon Technologies AG

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Price & Stock for FS50R06W1E3BOMA1

Part # Distributor Description Stock Price Buy
DISTI # 448-FS50R06W1E3BOMA1-ND
DigiKey IGBT MODULE 600V 70A 205W Min Qty: 1 Lead time: 26 Weeks Container: Tray 56
In Stock
  • 1 $40.2300
  • 24 $35.8438
  • 48 $33.7088
  • 96 $31.4615
  • 240 $30.3379
$30.3379 / $40.2300 Buy Now
DISTI # FS50R06W1E3BOMA1
Avnet Americas LOW POWER EASY - Trays (Alt: FS50R06W1E3BOMA1) RoHS: Compliant Min Qty: 24 Package Multiple: 24 Lead time: 26 Weeks, 0 Days Container: Tray 0
  • 24 $34.4875
$34.4875 Buy Now
DISTI # FS50R06W1E3BOMA1
Avnet Americas LOW POWER EASY - Trays (Alt: FS50R06W1E3BOMA1) RoHS: Compliant Min Qty: 24 Package Multiple: 24 Lead time: 26 Weeks, 0 Days Container: Tray 0
  • 24 $34.4875
$34.4875 Buy Now
DISTI # FS50R06W1E3BOMA1
Avnet Americas LOW POWER EASY - Trays (Alt: FS50R06W1E3BOMA1) RoHS: Compliant Min Qty: 24 Package Multiple: 24 Lead time: 26 Weeks, 0 Days Container: Tray 0
  • 24 $34.4875
$34.4875 Buy Now
DISTI # SP000092043
EBV Elektronik LOW POWER EASY (Alt: SP000092043) RoHS: Compliant Min Qty: 24 Package Multiple: 24 Lead time: 3 Weeks, 6 Days EBV - 960
Buy Now
Flip Electronics Stock 150
RFQ
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 24 768
  • 24 $44.2100
  • 768 $41.1400
$41.1400 / $44.2100 Buy Now

Part Details for FS50R06W1E3BOMA1

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FS50R06W1E3BOMA1 Part Data Attributes

FS50R06W1E3BOMA1 Infineon Technologies AG
Buy Now Datasheet
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FS50R06W1E3BOMA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, MODULE-22
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description FLANGE MOUNT, R-XUFM-X15
Pin Count 22
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 26 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 70 A
Collector-Emitter Voltage-Max 600 V
Configuration COMPLEX
JESD-30 Code R-XUFM-X15
Number of Elements 6
Number of Terminals 15
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 370 ns
Turn-on Time-Nom (ton) 250 ns

Alternate Parts for FS50R06W1E3BOMA1

This table gives cross-reference parts and alternative options found for FS50R06W1E3BOMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FS50R06W1E3BOMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FS50R06W1E3 Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, MODULE-22 Infineon Technologies AG FS50R06W1E3BOMA1 vs FS50R06W1E3
Part Number Description Manufacturer Compare
FS50R06W1E3 Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, MODULE-22 Infineon Technologies AG FS50R06W1E3BOMA1 vs FS50R06W1E3
FS50R06YL4BOMA1 Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, MODULE-23 Infineon Technologies AG FS50R06W1E3BOMA1 vs FS50R06YL4BOMA1

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