Datasheets
FS75R12W2T4BOMA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 107A I(C), 1200V V(BR)CES, N-Channel, MODULE-33

Part Details for FS75R12W2T4BOMA1 by Infineon Technologies AG

Overview of FS75R12W2T4BOMA1 by Infineon Technologies AG

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Price & Stock for FS75R12W2T4BOMA1

Part # Distributor Description Stock Price Buy
DISTI # 25AJ0838
Newark Igbt Mod, Six N-Ch, 1.2Kv, 75A, 375W Rohs Compliant: Yes |Infineon FS75R12W2T4BOMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 7
  • 1 $69.0900
  • 5 $66.9300
  • 10 $64.7700
  • 30 $62.6200
  • 60 $60.4600
  • 105 $56.1400
$56.1400 / $69.0900 Buy Now
DISTI # FS75R12W2T4BOMA1-ND
DigiKey IGBT MOD 1200V 107A 375W Min Qty: 1 Lead time: 26 Weeks Container: Tray 11
In Stock
  • 1 $66.4300
  • 15 $60.2053
  • 30 $58.1297
  • 90 $53.9774
$53.9774 / $66.4300 Buy Now
DISTI # FS75R12W2T4BOMA1
Avnet Americas LOW POWER EASY - Trays (Alt: FS75R12W2T4BOMA1) RoHS: Not Compliant Min Qty: 15 Package Multiple: 15 Lead time: 26 Weeks, 0 Days Container: Tray 0
  • 15 $63.7205
$63.7205 Buy Now
DISTI # 77679869
Verical Trans IGBT Module N-CH 1200V 107A 375W 35-Pin EASY2B-1 Tray Min Qty: 1 Package Multiple: 1 Americas - 15
  • 1 $83.1250
  • 5 $78.5000
  • 10 $70.7500
$70.7500 / $83.1250 Buy Now
Rochester Electronics FS75R12 - IGBT Module RoHS: Compliant Status: Active Min Qty: 1 15
  • 1 $59.9500
  • 25 $58.7500
  • 100 $56.3600
  • 500 $53.9600
  • 1,000 $50.9600
$50.9600 / $59.9500 Buy Now
DISTI # FS75R12W2T4BOMA1
Avnet Americas LOW POWER EASY - Trays (Alt: FS75R12W2T4BOMA1) RoHS: Not Compliant Min Qty: 15 Package Multiple: 15 Lead time: 26 Weeks, 0 Days Container: Tray 0
  • 15 $63.7205
$63.7205 Buy Now
Ameya Holding Limited   48
RFQ
DISTI # C1S322000809303
Chip1Stop IGBT Modules RoHS: Compliant Container: Tray 15
  • 1 $66.5000
  • 5 $62.8000
  • 10 $56.6000
$56.6000 / $66.5000 Buy Now
DISTI # SP000404118
EBV Elektronik LOW POWER EASY (Alt: SP000404118) RoHS: Compliant Min Qty: 15 Package Multiple: 15 Lead time: 3 Weeks, 6 Days EBV - 0
Buy Now
DISTI # 3227675
element14 Asia-Pacific IGBT MOD, SIX N-CH, 1.2KV, 75A, 375W RoHS: Compliant Min Qty: 1 Container: Each 7
  • 1 $70.2202
  • 5 $65.8292
  • 10 $61.4381
  • 50 $57.0544
$57.0544 / $70.2202 Buy Now
DISTI # 3227675
Farnell IGBT MOD, SIX N-CH, 1.2KV, 75A, 375W RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Each 7
  • 1 $66.6239
  • 5 $62.4607
  • 10 $58.2850
  • 50 $54.1218
$54.1218 / $66.6239 Buy Now

Part Details for FS75R12W2T4BOMA1

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FS75R12W2T4BOMA1 Part Data Attributes:

FS75R12W2T4BOMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
FS75R12W2T4BOMA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 107A I(C), 1200V V(BR)CES, N-Channel, MODULE-33
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description FLANGE MOUNT, R-XUFM-X15
Pin Count 33
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 26 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 107 A
Collector-Emitter Voltage-Max 1200 V
Configuration COMPLEX
JESD-30 Code R-XUFM-X15
Number of Elements 6
Number of Terminals 15
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 490 ns
Turn-on Time-Nom (ton) 185 ns

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