Datasheets
FW297-TL-2W by: onsemi

Dual N-Channel Power MOSFET 60 V, 58 mΩ, 4.5 A,, 2500-REEL

Part Details for FW297-TL-2W by onsemi

Overview of FW297-TL-2W by onsemi

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Applications Education and Research Industrial Automation Electronic Manufacturing

Price & Stock for FW297-TL-2W

Part # Distributor Description Stock Price Buy
DISTI # 28X7726
Newark Nch+Nch 4.5A 60V 4V Drive/Reel |Onsemi FW297-TL-2W Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.3980
  • 3,000 $0.3880
  • 6,000 $0.3580
  • 12,000 $0.3350
  • 18,000 $0.3120
  • 30,000 $0.2980
$0.2980 / $0.3980 Buy Now
Rochester Electronics FW297 - Dual N-Channel Power MOSFET 60 V, 58 m, 4.5 A, RoHS: Compliant pbFree: No Status: End of Life / Last Time Buy Min Qty: 1 32500
  • 1 $0.3369
  • 25 $0.3302
  • 100 $0.3167
  • 500 $0.3032
  • 1,000 $0.2864
$0.2864 / $0.3369 Buy Now
DISTI # 3616911
Farnell DUAL MOSFET RoHS: Compliant Min Qty: 2500 Lead time: 51 Weeks, 1 Days Container: Reel 0
  • 2,500 $0.3134
$0.3134 Buy Now
Flip Electronics Stock, ship today 1778
  • 1 $0.2000
$0.2000 RFQ

Part Details for FW297-TL-2W

FW297-TL-2W CAD Models

FW297-TL-2W Part Data Attributes

FW297-TL-2W onsemi
Buy Now Datasheet
Compare Parts:
FW297-TL-2W onsemi Dual N-Channel Power MOSFET 60 V, 58 mΩ, 4.5 A,, 2500-REEL
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Package Description SC-87, SOT-96, SOIC-8
Manufacturer Package Code 751CR
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Additional Feature ESD PROTECTED
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 4.5 A
Drain-source On Resistance-Max 0.058 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.2 W
Pulsed Drain Current-Max (IDM) 18 A
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

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