Part Details for FZ3600R17KE3B2NOSA1 by Infineon Technologies AG
Overview of FZ3600R17KE3B2NOSA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for FZ3600R17KE3B2NOSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-FZ3600R17KE3B2NOSA1-448-ND
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DigiKey | FZ3600R17KE3 - IGBT MODULE Min Qty: 1 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
494 In Stock |
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$2,050.8100 | Buy Now |
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Rochester Electronics | FZ3600R17KE3 - IGBT Module RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 494 |
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$1,759.9500 / $2,070.5300 | Buy Now |
Part Details for FZ3600R17KE3B2NOSA1
FZ3600R17KE3B2NOSA1 CAD Models
FZ3600R17KE3B2NOSA1 Part Data Attributes
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FZ3600R17KE3B2NOSA1
Infineon Technologies AG
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Datasheet
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FZ3600R17KE3B2NOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor,
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | MODULE-9 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 4800 A | |
| Collector-Emitter Voltage-Max | 1700 V | |
| Configuration | COMPLEX | |
| Gate-Emitter Thr Voltage-Max | 6.4 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X9 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 3 | |
| Number of Terminals | 9 | |
| Operating Temperature-Max | 125 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 20000 W | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 2100 ns | |
| Turn-on Time-Nom (ton) | 1050 ns | |
| VCEsat-Max | 2.45 V |
Alternate Parts for FZ3600R17KE3B2NOSA1
This table gives cross-reference parts and alternative options found for FZ3600R17KE3B2NOSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FZ3600R17KE3B2NOSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FZ3600R17KE3NOSA1 | Insulated Gate Bipolar Transistor, 4800A I(C), 1700V V(BR)CES, N-Channel, MODULE-9 | Infineon Technologies AG | FZ3600R17KE3B2NOSA1 vs FZ3600R17KE3NOSA1 |
| FZ3600R17KE3 | Insulated Gate Bipolar Transistor, 4800A I(C), 1700V V(BR)CES, N-Channel, MODULE-9 | Infineon Technologies AG | FZ3600R17KE3B2NOSA1 vs FZ3600R17KE3 |