Part Details for G3R75MT12D by GeneSic Semiconductor Inc
Overview of G3R75MT12D by GeneSic Semiconductor Inc
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for G3R75MT12D
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
89AH0995
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Newark | Sic Mosfet, N-Ch, 1.2Kv, 41A, 207W, Mosfet Module Configuration:Single, Channel Type:N Channel, Continuous Drain Current Id:41A, Drain Source Voltage Vds:1.2Kv, No. Of Pins:3Pins, Rds(On) Test Voltage:15V, Power Dissipation:207W Rohs Compliant: Yes |Genesic Semiconductor G3R75MT12D Min Qty: 600 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$8.1600 | Buy Now |
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DISTI #
1242-G3R75MT12D-ND
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DigiKey | SIC MOSFET N-CH 41A TO247-3 Min Qty: 1 Lead time: 26 Weeks Container: Tube |
3464 In Stock |
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$7.6700 / $10.5000 | Buy Now |
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DISTI #
905-G3R75MT12D
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Mouser Electronics | MOSFET 1200V 75mohm TO-247-3 G3R SiC MOSFET RoHS: Compliant | 1836 |
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$7.5400 / $10.5000 | Buy Now |
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DISTI #
G3R75MT12D
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TME | Transistor: N-MOSFET, SiC, unipolar, 1.2kV, 29A, Idm: 80A, 207W Min Qty: 1 | 281 |
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$9.2400 / $12.5000 | Buy Now |
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NAC | 1200V 75mOhm TO-247-3 G3R SiC MOSFET RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Tube | 0 |
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$10.3100 / $11.8900 | Buy Now |
Part Details for G3R75MT12D
G3R75MT12D CAD Models
G3R75MT12D Part Data Attributes:
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G3R75MT12D
GeneSic Semiconductor Inc
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Datasheet
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G3R75MT12D
GeneSic Semiconductor Inc
Power Field-Effect Transistor, 36A I(D), 1200V, 0.097ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | GENESIC SEMICONDUCTOR INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 199 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 36 A | |
| Drain-source On Resistance-Max | 0.097 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 3.8 pF | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 182 W | |
| Pulsed Drain Current-Max (IDM) | 70 A | |
| Reference Standard | IEC-60747-8-4 | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE |