Datasheets
GB05SLT12-252 by: GeneSic Semiconductor Inc

Silicon Carbide (SiC) Merged PiN Schottky (MPS) Diode 1200V 5A TO-252-2; Mounting Style: Surface Mount; Package / Case: TO-252-2; Packaging: Tape & Reel; Factory Pack Quantity: 2500; Configuration: Single; Repetitive Reverse Voltagen(VRRM): 1200 V; Forward Currentn(IF): 5 A; Forward Voltagen(VF): 1.5 V @ 5 A; Reverse Currentn(IR): 0.4 uA @ 1200 V; Total Capacitive Charge (QC): 22 nC; Capacitancen(C): 359 pF @ 1 V; Reverse Recovery Timen(trr): < 10 ns; Forward Surge Currentn(IFSM): 48 A; Power Dissipationn(PD): 200 W; Switching Speedn(ts): < 10 ns; Minimum Operating Temperature: - 55 °C; Maximum Operating Temperature: 175 °C

Part Details for GB05SLT12-252 by GeneSic Semiconductor Inc

Overview of GB05SLT12-252 by GeneSic Semiconductor Inc

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Applications Industrial Automation Renewable Energy Robotics and Drones

Price & Stock for GB05SLT12-252

Part # Distributor Description Stock Price Buy
NAC Silicon Carbide (SiC) Merged PiN Schottky (MPS)Diode 1200V 5A TO-252-2 RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 0
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Part Details for GB05SLT12-252

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GB05SLT12-252 Part Data Attributes

GB05SLT12-252 GeneSic Semiconductor Inc
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GB05SLT12-252 GeneSic Semiconductor Inc Silicon Carbide (SiC) Merged PiN Schottky (MPS) Diode 1200V 5A TO-252-2; Mounting Style: Surface Mount; Package / Case: TO-252-2; Packaging: Tape & Reel; Factory Pack Quantity: 2500; Configuration: Single; Repetitive Reverse Voltagen(VRRM): 1200 V; Forward Currentn(IF): 5 A; Forward Voltagen(VF): 1.5 V @ 5 A; Reverse Currentn(IR): 0.4 uA @ 1200 V; Total Capacitive Charge (QC): 22 nC; Capacitancen(C): 359 pF @ 1 V; Reverse Recovery Timen(trr): < 10 ns; Forward Surge Currentn(IFSM): 48 A; Power Dissipationn(PD): 200 W; Switching Speedn(ts): < 10 ns; Minimum Operating Temperature: - 55 °C; Maximum Operating Temperature: 175 °C
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer GENESIC SEMICONDUCTOR INC
Part Package Code TO-252-2
Package Description R-PSSO-G2
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.10.00.80
Additional Feature FREE WHEELING DIODE, HIGH RELIABILITY, PD-CASE
Application EFFICIENCY
Case Connection CATHODE
Configuration SINGLE
Diode Element Material SILICON CARBIDE
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 1.8 V
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
Non-rep Pk Forward Current-Max 50 A
Number of Elements 1
Number of Phases 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Output Current-Max 18 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max 178 W
Rep Pk Reverse Voltage-Max 1200 V
Reverse Current-Max 5 µA
Reverse Test Voltage 1200 V
Surface Mount YES
Technology SCHOTTKY
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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