Datasheets
GB20SLT12-247 by: GeneSic Semiconductor Inc

Silicon Carbide (SiC) Merged PiN Schottky (MPS) Diode 1200V 20A TO-247-2; Mounting Style: Through Hole; Package / Case: TO-247-2; Packaging: Tube; Factory Pack Quantity: 30; Configuration: Single; Repetitive Reverse Voltagen(VRRM): 1200 V; Forward Currentn(IF): 20 A; Forward Voltagen(VF): 1.5 V @ 20 A; Reverse Currentn(IR): 1.8 uA @ 1200 V; Total Capacitive Charge (QC): 79 nC; Capacitancen(C): 1298 pF @ 1 V; Reverse Recovery Timen(trr): < 10 ns; Forward Surge Currentn(IFSM): 120 A; Power Dissipationn(PD): 549 W; Switching Speedn(ts): < 10 ns; Minimum Operating Temperature: - 55 °C; Maximum Operating Temperature: 175 °C

Part Details for GB20SLT12-247 by GeneSic Semiconductor Inc

Overview of GB20SLT12-247 by GeneSic Semiconductor Inc

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Applications Industrial Automation Electronic Manufacturing Motor control systems

Price & Stock for GB20SLT12-247

Part # Distributor Description Stock Price Buy
DISTI # 19T9195
Newark Sic Schottky Diode, 1200V, 20A, To-247, Product Range:1200V Series, Diode Configuration:Single, Repetitive Peak Reverse Voltage:1.2Kv, Average Forward Current:20A, Total Capacitive Charge:112Nc, Diode Case Style:To-247Ac Rohs Compliant: Yes |Genesic Semiconductor GB20SLT12-247 Min Qty: 600 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
NAC Silicon Carbide (SiC) Merged PiN Schottky (MPS)Diode 1200V 20A TO-247-2 RoHS: Compliant Min Qty: 30 Package Multiple: 30 Container: Tube 0
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Part Details for GB20SLT12-247

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GB20SLT12-247 Part Data Attributes:

GB20SLT12-247 GeneSic Semiconductor Inc
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GB20SLT12-247 GeneSic Semiconductor Inc Silicon Carbide (SiC) Merged PiN Schottky (MPS) Diode 1200V 20A TO-247-2; Mounting Style: Through Hole; Package / Case: TO-247-2; Packaging: Tube; Factory Pack Quantity: 30; Configuration: Single; Repetitive Reverse Voltagen(VRRM): 1200 V; Forward Currentn(IF): 20 A; Forward Voltagen(VF): 1.5 V @ 20 A; Reverse Currentn(IR): 1.8 uA @ 1200 V; Total Capacitive Charge (QC): 79 nC; Capacitancen(C): 1298 pF @ 1 V; Reverse Recovery Timen(trr): < 10 ns; Forward Surge Currentn(IFSM): 120 A; Power Dissipationn(PD): 549 W; Switching Speedn(ts): < 10 ns; Minimum Operating Temperature: - 55 °C; Maximum Operating Temperature: 175 °C
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer GENESIC SEMICONDUCTOR INC
Part Package Code TO-247-2
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.10.00.80
Additional Feature FREE WHEELING DIODE, HIGH RELIABILITY, PD-CASE
Application SWITCHING
Case Connection CATHODE
Configuration SINGLE
Diode Element Material SILICON CARBIDE
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 1.8 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T2
Non-rep Pk Forward Current-Max 200 A
Number of Elements 1
Number of Phases 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Output Current-Max 46 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Power Dissipation-Max 312 W
Rep Pk Reverse Voltage-Max 1200 V
Reverse Current-Max 10 µA
Reverse Test Voltage 1200 V
Surface Mount NO
Technology SCHOTTKY
Terminal Form THROUGH-HOLE
Terminal Position SINGLE

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