-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Insulated Gate Bipolar Transistor
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
264-GT15J341S4X-ND
|
DigiKey | IGBT 600V 15A TO220SIS Min Qty: 1 Lead time: 24 Weeks Container: Tube |
158 In Stock |
|
$0.7450 / $1.7200 | Buy Now |
DISTI #
GT15J341,S4X
|
Avnet Americas | IGBT N-Channel 600V 3-Pin TO-220SIS - Rail/Tube (Alt: GT15J341,S4X) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 53 Weeks, 1 Days Container: Tube | 0 |
|
$0.8642 / $1.1026 | Buy Now |
DISTI #
757-GT15J341S4X
|
Mouser Electronics | IGBT Transistors Pb-F DISCRETE IGBT TRANSISTOR TO-220SIS P=30W F=1MHZ RoHS: Compliant | 0 |
|
$0.7450 / $1.7200 | Order Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
GT15J341,S4X
Toshiba America Electronic Components
Buy Now
Datasheet
|
Compare Parts:
GT15J341,S4X
Toshiba America Electronic Components
Insulated Gate Bipolar Transistor
|
Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | , | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 53 Weeks, 1 Day | |
Samacsys Manufacturer | Toshiba | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 15 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Voltage-Max | 25 V | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 30 W | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 320 ns | |
Turn-on Time-Nom (ton) | 180 ns | |
VCEsat-Max | 2 V |