Datasheets
HAT2020R-EL-E by:

Nch Single Power Mosfet 30V 8A 28Mohm Sop8, SOP, /Embossed Tape

Part Details for HAT2020R-EL-E by Renesas Electronics Corporation

Overview of HAT2020R-EL-E by Renesas Electronics Corporation

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Price & Stock for HAT2020R-EL-E

Part # Distributor Description Stock Price Buy
Chip1Cloud Silicon N Channel Power MOS FET High Speed Power Switching 42000
RFQ
Sense Electronic Company Limited SOP8 1540
RFQ

Part Details for HAT2020R-EL-E

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HAT2020R-EL-E Part Data Attributes

HAT2020R-EL-E Renesas Electronics Corporation
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HAT2020R-EL-E Renesas Electronics Corporation Nch Single Power Mosfet 30V 8A 28Mohm Sop8, SOP, /Embossed Tape
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer RENESAS ELECTRONICS CORP
Part Package Code SOP
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Manufacturer Package Code PRSP0008DD
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Renesas Electronics
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.05 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Pulsed Drain Current-Max (IDM) 64 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 20
Transistor Application SWITCHING
Transistor Element Material SILICON

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