Datasheets
HGTG11N120CND by:

Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-247,

Part Details for HGTG11N120CND by Fairchild Semiconductor Corporation

Overview of HGTG11N120CND by Fairchild Semiconductor Corporation

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Price & Stock for HGTG11N120CND

Part # Distributor Description Stock Price Buy
ComSIT USA 43A, 1200V, NPT SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-247 RoHS: Compliant Europe - 200
RFQ
Win Source Electronics Trans IGBT Chip N-CH 1200V 43A 298000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 1200V 43A 298W TO247 69900
  • 13 $4.0750
  • 30 $3.3440
  • 47 $3.2390
  • 64 $3.1350
  • 83 $3.0300
  • 111 $2.7170
$2.7170 / $4.0750 Buy Now

Part Details for HGTG11N120CND

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HGTG11N120CND Part Data Attributes

HGTG11N120CND Fairchild Semiconductor Corporation
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HGTG11N120CND Fairchild Semiconductor Corporation Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-247,
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-247
Pin Count 3
Manufacturer Package Code TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LOW CONDUCTION LOSS
Collector Current-Max (IC) 43 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 400 ns
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 298 W
Qualification Status Not Qualified
Rise Time-Max (tr) 16 ns
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 570 ns
Turn-on Time-Nom (ton) 33 ns

Alternate Parts for HGTG11N120CND

This table gives cross-reference parts and alternative options found for HGTG11N120CND. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTG11N120CND, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HGTG11N120CND 11A, 1200V, N-CHANNEL IGBT, TO-247 Intersil Corporation HGTG11N120CND vs HGTG11N120CND
HGTG11N120CND_NL Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-247 Fairchild Semiconductor Corporation HGTG11N120CND vs HGTG11N120CND_NL
HGTG11N120CND 1200V, NPT IGBT, 450-TUBE onsemi HGTG11N120CND vs HGTG11N120CND
Part Number Description Manufacturer Compare
IRGP30B120KD-E Insulated Gate Bipolar Transistor, 60A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN International Rectifier HGTG11N120CND vs IRGP30B120KD-E
HGTG20N60A4D Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN Fairchild Semiconductor Corporation HGTG11N120CND vs HGTG20N60A4D
IRG4PC30KD Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN International Rectifier HGTG11N120CND vs IRG4PC30KD
IRG4IBC30KD Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, FULL PACK-3 International Rectifier HGTG11N120CND vs IRG4IBC30KD
HGTG20N60A4 600V, SMPS IGBT, TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB, 450/RAIL Fairchild Semiconductor Corporation HGTG11N120CND vs HGTG20N60A4
IRG4PF50WD Insulated Gate Bipolar Transistor, 51A I(C), 900V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN International Rectifier HGTG11N120CND vs IRG4PF50WD
IRG4PC40K Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN International Rectifier HGTG11N120CND vs IRG4PC40K
IRG4PH20KD Insulated Gate Bipolar Transistor, 11A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN International Rectifier HGTG11N120CND vs IRG4PH20KD
IRG4PH40UD Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN International Rectifier HGTG11N120CND vs IRG4PH40UD
IRG4PC30K Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN International Rectifier HGTG11N120CND vs IRG4PC30K

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