Part Details for HGTG11N120CND by Fairchild Semiconductor Corporation
Overview of HGTG11N120CND by Fairchild Semiconductor Corporation
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for HGTG11N120CND
Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | 43A, 1200V, NPT SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-247 RoHS: Compliant | Europe - 200 |
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RFQ | |
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Win Source Electronics | Trans IGBT Chip N-CH 1200V 43A 298000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 1200V 43A 298W TO247 | 69900 |
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$2.7170 / $4.0750 | Buy Now |
Part Details for HGTG11N120CND
HGTG11N120CND CAD Models
HGTG11N120CND Part Data Attributes
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HGTG11N120CND
Fairchild Semiconductor Corporation
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Datasheet
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HGTG11N120CND
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-247,
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-247 | |
Pin Count | 3 | |
Manufacturer Package Code | TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | LOW CONDUCTION LOSS | |
Collector Current-Max (IC) | 43 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 400 ns | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 298 W | |
Qualification Status | Not Qualified | |
Rise Time-Max (tr) | 16 ns | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 570 ns | |
Turn-on Time-Nom (ton) | 33 ns |
Alternate Parts for HGTG11N120CND
This table gives cross-reference parts and alternative options found for HGTG11N120CND. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTG11N120CND, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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HGTG11N120CND | 11A, 1200V, N-CHANNEL IGBT, TO-247 | Intersil Corporation | HGTG11N120CND vs HGTG11N120CND |
HGTG11N120CND_NL | Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-247 | Fairchild Semiconductor Corporation | HGTG11N120CND vs HGTG11N120CND_NL |
HGTG11N120CND | 1200V, NPT IGBT, 450-TUBE | onsemi | HGTG11N120CND vs HGTG11N120CND |