Datasheets
HGTG11N120CND by:

1200V, NPT IGBT, 450-TUBE

Part Details for HGTG11N120CND by onsemi

Overview of HGTG11N120CND by onsemi

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Price & Stock for HGTG11N120CND

Part # Distributor Description Stock Price Buy
DISTI # 58K8900
Newark Single Igbt, 1.2Kv, 43A, Continuous Collector Current:43A, Collector Emitter Saturation Voltage:2.1V, Power Dissipation:298W, Collector Emitter Voltage Max:1.2Kv, No. Of Pins:3Pins, Operating Temperature Max:150°C, Product Range:- Rohs Compliant: Yes |Onsemi HGTG11N120CND Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 80
  • 1 $4.5700
  • 10 $4.5400
  • 25 $3.9200
  • 50 $3.7800
  • 100 $3.6400
  • 250 $3.5900
  • 900 $3.0500
$3.0500 / $4.5700 Buy Now
DISTI # HGTG11N120CND-ND
DigiKey IGBT NPT 1200V 43A TO247-3 Min Qty: 1 Lead time: 62 Weeks Container: Tube 221
In Stock
  • 1 $5.4800
  • 30 $4.3433
  • 120 $3.7229
  • 510 $3.3092
  • 1,020 $2.8335
  • 2,010 $2.6681
$2.6681 / $5.4800 Buy Now
DISTI # HGTG11N120CND
Avnet Americas Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG11N120CND) RoHS: Not Compliant Min Qty: 450 Package Multiple: 450 Container: Tube 0
  • 450 $3.0717
  • 900 $2.9898
  • 1,800 $2.9079
  • 2,700 $2.8260
  • 3,600 $2.7441
$2.7441 / $3.0717 Buy Now
DISTI # 58K8900
Avnet Americas Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K8900) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 63 Weeks, 4 Days Container: Bulk 80 Partner Stock
  • 1 $4.9800
  • 10 $4.4700
  • 25 $3.7200
  • 50 $3.5400
  • 100 $3.3800
$3.3800 / $4.9800 Buy Now
DISTI # 512-HGTG11N120CND
Mouser Electronics IGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst Dd RoHS: Compliant 1825
  • 1 $5.4700
  • 10 $4.6000
  • 25 $4.3400
  • 100 $3.7200
  • 250 $3.5100
  • 450 $3.3000
  • 900 $2.8300
  • 2,700 $2.6600
$2.6600 / $5.4700 Buy Now
Rochester Electronics 1200V, NPT IGBT RoHS: Compliant Status: Active Min Qty: 1 277
  • 1 $2.9900
  • 25 $2.9300
  • 100 $2.8100
  • 500 $2.6900
  • 1,000 $2.5400
$2.5400 / $2.9900 Buy Now
DISTI # HGTG11N120CND
Avnet Americas Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG11N120CND) RoHS: Not Compliant Min Qty: 450 Package Multiple: 450 Container: Tube 0
  • 450 $3.0717
  • 900 $2.9898
  • 1,800 $2.9079
  • 2,700 $2.8260
  • 3,600 $2.7441
$2.7441 / $3.0717 Buy Now
DISTI # 58K8900
Avnet Americas Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K8900) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 63 Weeks, 4 Days Container: Bulk 80 Partner Stock
  • 1 $4.9800
  • 10 $4.4700
  • 25 $3.7200
  • 50 $3.5400
  • 100 $3.3800
$3.3800 / $4.9800 Buy Now
DISTI # HGTG11N120CND
Avnet Americas Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG11N120CND) RoHS: Not Compliant Min Qty: 450 Package Multiple: 450 Container: Tube 0
  • 450 $3.0717
  • 900 $2.9898
  • 1,800 $2.9079
  • 2,700 $2.8260
  • 3,600 $2.7441
$2.7441 / $3.0717 Buy Now
DISTI # 58K8900
Avnet Americas Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K8900) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 63 Weeks, 4 Days Container: Bulk 80 Partner Stock
  • 1 $4.9800
  • 10 $4.4700
  • 25 $3.7200
  • 50 $3.5400
  • 100 $3.3800
$3.3800 / $4.9800 Buy Now
DISTI # HGTG11N120CND
Avnet Silica Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG11N120CND) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 5 Weeks, 2 Days Silica - 270
Buy Now
CHIPMALL.COM LIMITED IGBT NPT 1200V 43A TO247-3 4496
  • 1 $3.6197
  • 10 $3.1300
  • 100 $2.5438
  • 500 $2.4078
  • 1,000 $2.3479
$2.3479 / $3.6197 Buy Now
DISTI # HGTG11N120CND
EBV Elektronik Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG11N120CND) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 7 Weeks, 4 Days EBV - 30
Buy Now
DISTI # 1611490
element14 Asia-Pacific DC Collector Current:43A RoHS: Compliant Min Qty: 1 Container: Each 1690
  • 1 $4.4534
  • 10 $3.7869
  • 100 $2.8859
  • 500 $2.8347
  • 1,000 $2.7834
$2.7834 / $4.4534 Buy Now
DISTI # 1611490
Farnell IGBT, N RoHS: Compliant Min Qty: 1 Lead time: 40 Weeks, 1 Days Container: Each 1610
  • 1 $4.7476
  • 10 $3.6107
  • 100 $2.7486
  • 500 $2.6987
  • 1,000 $2.6862
$2.6862 / $4.7476 Buy Now
New Advantage Corporation TO-247 3L1200V,43A,NPT SERIES NCH, IGBT W/ ANTI-PARALLEL HYPERFAST RoHS: Compliant Min Qty: 1 Package Multiple: 30 210
  • 60 $4.7200
  • 210 $4.3900
$4.3900 / $4.7200 Buy Now
Wuhan P&S 1200V NPT IGBT Min Qty: 1 350
  • 1 $7.1400
  • 100 $4.5600
  • 500 $3.7600
  • 1,000 $3.4600
$3.4600 / $7.1400 Buy Now

Part Details for HGTG11N120CND

HGTG11N120CND CAD Models

HGTG11N120CND Part Data Attributes

HGTG11N120CND onsemi
Buy Now Datasheet
Compare Parts:
HGTG11N120CND onsemi 1200V, NPT IGBT, 450-TUBE
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Manufacturer Package Code 340CK
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 64 Weeks, 4 Days
Samacsys Manufacturer onsemi
Additional Feature LOW CONDUCTION LOSS
Collector Current-Max (IC) 43 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 570 ns
Turn-on Time-Nom (ton) 33 ns

Alternate Parts for HGTG11N120CND

This table gives cross-reference parts and alternative options found for HGTG11N120CND. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTG11N120CND, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HGTG11N120CND 11A, 1200V, N-CHANNEL IGBT, TO-247 Intersil Corporation HGTG11N120CND vs HGTG11N120CND
HGTG11N120CND_NL Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-247 Fairchild Semiconductor Corporation HGTG11N120CND vs HGTG11N120CND_NL
HGTG11N120CND Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-247, Fairchild Semiconductor Corporation HGTG11N120CND vs HGTG11N120CND
Part Number Description Manufacturer Compare
IXSH30N60 Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation HGTG11N120CND vs IXSH30N60
IRGPC30FD2 Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN International Rectifier HGTG11N120CND vs IRGPC30FD2
APT12GT60KR Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN Microsemi Corporation HGTG11N120CND vs APT12GT60KR
IRG4PC40SPBF Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN Infineon Technologies AG HGTG11N120CND vs IRG4PC40SPBF
IRG4PC40KD Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN Infineon Technologies AG HGTG11N120CND vs IRG4PC40KD
HGT1S12N60C3R Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-262AA, PLASTIC PACKAGE-3 Harris Semiconductor HGTG11N120CND vs HGT1S12N60C3R
GT8Q101 TRANSISTOR 8 A, 1200 V, N-CHANNEL IGBT, TO-3PN, TO-3PN, 3 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components HGTG11N120CND vs GT8Q101
IRG4BC15UDPBF Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG HGTG11N120CND vs IRG4BC15UDPBF
SGP6N60UFD Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN Samsung Semiconductor HGTG11N120CND vs SGP6N60UFD
IRG4BC30U-S Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, D2PAK-3 International Rectifier HGTG11N120CND vs IRG4BC30U-S

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