Part Details for HN1C01FU-Y by Toshiba America Electronic Components
Overview of HN1C01FU-Y by Toshiba America Electronic Components
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for HN1C01FU-Y
| Part # | Distributor | Description | Stock | Price | Buy | |
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Velocity Electronics | Our Stock | 20076 |
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RFQ | |
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Chip1Cloud | Audio-Frequency General-Purpose Amplifier Applications | 12000 |
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RFQ |
Part Details for HN1C01FU-Y
HN1C01FU-Y CAD Models
HN1C01FU-Y Part Data Attributes
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HN1C01FU-Y
Toshiba America Electronic Components
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Datasheet
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HN1C01FU-Y
Toshiba America Electronic Components
TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2J1A, 6 PIN, BIP General Purpose Small Signal
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | SMALL OUTLINE, R-PDSO-G6 | |
| Pin Count | 6 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Collector Current-Max (IC) | 0.15 A | |
| Collector-Base Capacitance-Max | 3.5 pF | |
| Collector-Emitter Voltage-Max | 50 V | |
| Configuration | SEPARATE, 2 ELEMENTS | |
| DC Current Gain-Min (hFE) | 120 | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e0 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Temperature-Max | 125 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 0.2 W | |
| Power Dissipation-Max (Abs) | 0.2 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 80 MHz | |
| VCEsat-Max | 0.25 V |