Part Details for HUF75652G3 by Fairchild Semiconductor Corporation
Overview of HUF75652G3 by Fairchild Semiconductor Corporation
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (5 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for HUF75652G3
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 1 | 4 |
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$11.2000 | Buy Now |
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Bristol Electronics | 33 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-247 | 26 |
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$6.2200 / $9.3300 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-247 | 3 |
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$7.5000 / $15.0000 | Buy Now |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 46 |
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$8.5000 / $13.0800 | Buy Now |
Part Details for HUF75652G3
HUF75652G3 CAD Models
HUF75652G3 Part Data Attributes:
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HUF75652G3
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
HUF75652G3
Fairchild Semiconductor Corporation
N-Channel UltraFET® Power MOSFET 100V, 75A, 8mΩ, TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB, 450/RAIL
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-247 | |
Pin Count | 3 | |
Manufacturer Package Code | TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 75 A | |
Drain-source On Resistance-Max | 0.008 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 515 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for HUF75652G3
This table gives cross-reference parts and alternative options found for HUF75652G3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF75652G3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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HUF75652G3 | 75A, 100V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | Rochester Electronics LLC | HUF75652G3 vs HUF75652G3 |
HUF75652G3 | N-Channel UltraFET® Power MOSFET 100V, 75A, 8mΩ, 450-TUBE | onsemi | HUF75652G3 vs HUF75652G3 |
HUF75652G3 | 75A, 100V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | Intersil Corporation | HUF75652G3 vs HUF75652G3 |
HUF75652G3_NL | 75A, 100V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | Rochester Electronics LLC | HUF75652G3 vs HUF75652G3_NL |
HUF75652G3_NL | Power Field-Effect Transistor, 75A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | Fairchild Semiconductor Corporation | HUF75652G3 vs HUF75652G3_NL |