Datasheets
HUF75652G3 by:

N-Channel UltraFET® Power MOSFET 100V, 75A, 8mΩ, 450-TUBE

Part Details for HUF75652G3 by onsemi

Overview of HUF75652G3 by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for HUF75652G3

Part # Distributor Description Stock Price Buy
DISTI # 58K1615
Newark N Channel Mosfet, 100V, 75A, To-247, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:75A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Onsemi HUF75652G3 Min Qty: 450 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 250 $6.5500
  • 900 $6.3600
$6.3600 / $6.5500 Buy Now
DISTI # 31Y2014
Newark Mosfet Transistor, N Channel, 75 A, 100 V, 0.0067 Ohm, 10 V, 4 V Rohs Compliant: Yes |Onsemi HUF75652G3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $8.6300
  • 10 $8.2900
  • 25 $7.8500
  • 50 $7.4000
  • 100 $7.3500
  • 250 $7.2900
  • 900 $7.1100
$7.1100 / $8.6300 Buy Now
DISTI # 27AC6542
Newark Fet 100V 8.0 Mohm To247 Rohs Compliant: Yes |Onsemi HUF75652G3 Min Qty: 30 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $4.9000
  • 60 $4.8800
  • 90 $4.8300
  • 150 $4.7800
  • 300 $4.6900
$4.6900 / $4.9000 Buy Now
DISTI # HUF75652G3-ND
DigiKey MOSFET N-CH 100V 75A TO247-3 Min Qty: 1 Lead time: 25 Weeks Container: Tube 132
In Stock
  • 1 $9.6400
  • 30 $7.6930
  • 120 $6.8833
  • 510 $6.0735
  • 1,020 $5.4661
$5.4661 / $9.6400 Buy Now
DISTI # HUF75652G3
Avnet Americas Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HUF75652G3) RoHS: Compliant Min Qty: 30 Package Multiple: 1 Lead time: 25 Weeks, 0 Days Container: Tube 0
  • 30 $6.0133
  • 40 $5.8530
  • 70 $5.6926
  • 150 $5.5323
  • 300 $5.3719
$5.3719 / $6.0133 Buy Now
DISTI # 512-HUF75652G3
Mouser Electronics MOSFET 75a 100VN-Ch MOSFET RoHS: Compliant 400
  • 1 $9.3100
  • 10 $9.2900
  • 25 $7.4700
  • 100 $6.7400
  • 250 $6.5200
  • 450 $5.9300
  • 900 $5.7300
$5.7300 / $9.3100 Buy Now
Future Electronics N-Channel 100 V 0.008 Ω Flange Mount UltraFET Power Mosfet - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube 283
Tube
  • 1 $5.5100
  • 10 $5.4500
  • 40 $5.4000
  • 125 $5.3600
  • 400 $5.2700
$5.2700 / $5.5100 Buy Now
Future Electronics N-Channel 100 V 0.008 Ω Flange Mount UltraFET Power Mosfet - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $5.4100
  • 90 $5.3700
  • 150 $5.3500
  • 450 $5.3100
  • 750 $5.2700
$5.2700 / $5.4100 Buy Now
DISTI # HUF75652G3
TME Transistor: N-MOSFET, unipolar, 100V, 75A, 515W, TO247 Min Qty: 1 0
  • 1 $11.4700
  • 3 $10.3200
  • 10 $9.1200
  • 30 $8.1800
$8.1800 / $11.4700 RFQ
DISTI # HUF75652G3
Avnet Silica Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-247 Rail (Alt: HUF75652G3) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 26 Weeks, 0 Days Silica - 1710
Buy Now
DISTI # HUF75652G3
EBV Elektronik Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-247 Rail (Alt: HUF75652G3) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 27 Weeks, 0 Days EBV - 0
Buy Now
LCSC 100V 75A 8m75A10V 515W 4V250uA 1PCSNChannel TO-247-3 MOSFETs ROHS 81
  • 1 $9.9297
  • 10 $8.1965
  • 30 $6.7053
  • 100 $6.1865
$6.1865 / $9.9297 Buy Now
New Advantage Corporation FET 100V 8.0 MOHM TO247 RoHS: Compliant Min Qty: 1 Package Multiple: 30 1390
  • 29 $7.8700
  • 1,390 $7.3200
$7.3200 / $7.8700 Buy Now

Part Details for HUF75652G3

HUF75652G3 CAD Models

HUF75652G3 Part Data Attributes:

HUF75652G3 onsemi
Buy Now Datasheet
Compare Parts:
HUF75652G3 onsemi N-Channel UltraFET® Power MOSFET 100V, 75A, 8mΩ, 450-TUBE
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Manufacturer Package Code 340CK
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 60 Weeks
Samacsys Manufacturer onsemi
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.008 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 515 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for HUF75652G3

This table gives cross-reference parts and alternative options found for HUF75652G3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF75652G3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HUF75652G3 75A, 100V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Rochester Electronics LLC HUF75652G3 vs HUF75652G3
HUF75652G3 N-Channel UltraFET® Power MOSFET 100V, 75A, 8mΩ, TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB, 450/RAIL Fairchild Semiconductor Corporation HUF75652G3 vs HUF75652G3
HUF75652G3 75A, 100V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Intersil Corporation HUF75652G3 vs HUF75652G3
HUF75652G3_NL 75A, 100V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Rochester Electronics LLC HUF75652G3 vs HUF75652G3_NL
HUF75652G3_NL Power Field-Effect Transistor, 75A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 Fairchild Semiconductor Corporation HUF75652G3 vs HUF75652G3_NL
Part Number Description Manufacturer Compare
HUF75652G3_NL 75A, 100V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Rochester Electronics LLC HUF75652G3 vs HUF75652G3_NL
HUF75652G3 N-Channel UltraFET® Power MOSFET 100V, 75A, 8mΩ, TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB, 450/RAIL Fairchild Semiconductor Corporation HUF75652G3 vs HUF75652G3
HUF75652G3 75A, 100V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Rochester Electronics LLC HUF75652G3 vs HUF75652G3
HUF75652G3 75A, 100V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Intersil Corporation HUF75652G3 vs HUF75652G3
HUF75652G3_NL Power Field-Effect Transistor, 75A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 Fairchild Semiconductor Corporation HUF75652G3 vs HUF75652G3_NL

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