Datasheets
HUF76113DK8T by:

Power Field-Effect Transistor, 6A I(D), 30V, 0.041ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, PLASTIC, SO-8

Part Details for HUF76113DK8T by Fairchild Semiconductor Corporation

Overview of HUF76113DK8T by Fairchild Semiconductor Corporation

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Price & Stock for HUF76113DK8T

Part # Distributor Description Stock Price Buy
DISTI # 2156-HUF76113DK8T-ND
DigiKey MOSFET 2N-CH 30V 6A US8 Min Qty: 592 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 77500
In Stock
  • 592 $0.5100
$0.5100 Buy Now
Rochester Electronics Power Field-Effect Transistor, 6A, 30V, 0.041ohm, 2-Element, N-Channel, MOSFET, MS-012AA ' RoHS: Compliant Status: Obsolete Min Qty: 1 77500
  • 1 $0.5119
  • 25 $0.5017
  • 100 $0.4812
  • 500 $0.4607
  • 1,000 $0.4351
$0.4351 / $0.5119 Buy Now

Part Details for HUF76113DK8T

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HUF76113DK8T Part Data Attributes:

HUF76113DK8T Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
HUF76113DK8T Fairchild Semiconductor Corporation Power Field-Effect Transistor, 6A I(D), 30V, 0.041ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, PLASTIC, SO-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOIC
Package Description PLASTIC, SO-8
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 0.041 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for HUF76113DK8T

This table gives cross-reference parts and alternative options found for HUF76113DK8T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF76113DK8T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HUF76113DK8T Power Field-Effect Transistor, 6A I(D), 30V, 0.041ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Harris Semiconductor HUF76113DK8T vs HUF76113DK8T
HUF76113DK8 Power Field-Effect Transistor, 6A I(D), 30V, 0.041ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, PLASTIC, SO-8 Fairchild Semiconductor Corporation HUF76113DK8T vs HUF76113DK8
HUF76113DK8T 6A, 30V, 0.041ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8 Intersil Corporation HUF76113DK8T vs HUF76113DK8T
HUF76113DK8 6A, 30V, 0.041ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA Intersil Corporation HUF76113DK8T vs HUF76113DK8
HUF76113DK8T 6A, 30V, 0.041ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8 Rochester Electronics LLC HUF76113DK8T vs HUF76113DK8T
Part Number Description Manufacturer Compare
MMDF2P01HDR2 3.4A, 12V, 0.18ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, SO-8 onsemi HUF76113DK8T vs MMDF2P01HDR2
HP4936DY 5.8A, 30V, 0.037ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Intersil Corporation HUF76113DK8T vs HP4936DY
RF1K49090 Power Field-Effect Transistor, 3.5A I(D), 12V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Fairchild Semiconductor Corporation HUF76113DK8T vs RF1K49090
HAT1126R 6A, 60V, 0.085ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, FP-8DA, SOP-8 Renesas Electronics Corporation HUF76113DK8T vs HAT1126R
HP4936DYT 5.8A, 30V, 0.037ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Intersil Corporation HUF76113DK8T vs HP4936DYT
BSO207P Power Field-Effect Transistor, 5.7A I(D), 20V, 0.045ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, SOP-8 Infineon Technologies AG HUF76113DK8T vs BSO207P
BSO301SPH Power Field-Effect Transistor, 12.6A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 Infineon Technologies AG HUF76113DK8T vs BSO301SPH
HUF76105DK8T Power Field-Effect Transistor, 5A I(D), 30V, 0.072ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOIC-8 Fairchild Semiconductor Corporation HUF76113DK8T vs HUF76105DK8T
NDS8961 Power Field-Effect Transistor, 3.1A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation HUF76113DK8T vs NDS8961
BSO211PHXUMA1 Power Field-Effect Transistor, 3.2A I(D), 20V, 0.067ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 Infineon Technologies AG HUF76113DK8T vs BSO211PHXUMA1

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