Part Details for HYB18T512161B2F-25 by Qimonda AG
Overview of HYB18T512161B2F-25 by Qimonda AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for HYB18T512161B2F-25
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 6165 |
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RFQ |
Part Details for HYB18T512161B2F-25
HYB18T512161B2F-25 CAD Models
HYB18T512161B2F-25 Part Data Attributes
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HYB18T512161B2F-25
Qimonda AG
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Datasheet
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HYB18T512161B2F-25
Qimonda AG
DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, ROHS COMPLIANT, PLASTIC, TFBGA-84
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | QIMONDA AG | |
| Part Package Code | BGA | |
| Package Description | TFBGA, BGA84,9X15,32 | |
| Pin Count | 84 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.28 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.5 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 400 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 4,8 | |
| JESD-30 Code | R-PBGA-B84 | |
| Length | 12.5 mm | |
| Memory Density | 536870912 bit | |
| Memory IC Type | DDR2 DRAM | |
| Memory Width | 16 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 84 | |
| Number of Words | 33554432 words | |
| Number of Words Code | 32000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 95 °C | |
| Operating Temperature-Min | ||
| Organization | 32MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA84,9X15,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 4,8 | |
| Standby Current-Max | 0.004 A | |
| Supply Current-Max | 0.203 mA | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 10 mm |
Alternate Parts for HYB18T512161B2F-25
This table gives cross-reference parts and alternative options found for HYB18T512161B2F-25. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYB18T512161B2F-25, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NT5TU32M16CG-37B | DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, ROHS COMPLIANT, BGA-84 | Nanya Technology Corporation | HYB18T512161B2F-25 vs NT5TU32M16CG-37B |
| HYB18T512160AF-3.7 | DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 | Infineon Technologies AG | HYB18T512161B2F-25 vs HYB18T512160AF-3.7 |
| HYB18T512160BF-3.7F | DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, ROHS COMPLIANT, PLASTIC, TFBGA-84 | Infineon Technologies AG | HYB18T512161B2F-25 vs HYB18T512160BF-3.7F |
| HYB18T512160AFL-3.7 | DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 | Infineon Technologies AG | HYB18T512161B2F-25 vs HYB18T512160AFL-3.7 |
| NT5TU32MHAF-37A | DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, 0.80 MM PITCH, FBGA-84 | Nanya Technology Corporation | HYB18T512161B2F-25 vs NT5TU32MHAF-37A |
| NT5TU32M16CG-37BI | DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, ROHS COMPLIANT, BGA-84 | Nanya Technology Corporation | HYB18T512161B2F-25 vs NT5TU32M16CG-37BI |
| MT47H32M16FN-37EIT:D | DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, 10 X 12.50 MM, FBGA-84 | Micron Technology Inc | HYB18T512161B2F-25 vs MT47H32M16FN-37EIT:D |
| HYB18T512160AFL-3.7 | DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 | Qimonda AG | HYB18T512161B2F-25 vs HYB18T512160AFL-3.7 |
| HYB18TC512160AF-3.7 | DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, ROHS COMPLIANT, PLASTIC, TFBGA-84 | Infineon Technologies AG | HYB18T512161B2F-25 vs HYB18TC512160AF-3.7 |
| HYI18TC512160B2F-3.7 | DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, ROHS COMPLIANT, PLASTIC TFBGA-84 | Qimonda AG | HYB18T512161B2F-25 vs HYI18TC512160B2F-3.7 |