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Insulated Gate Bipolar Transistor,
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
42AH1798
|
Newark | Igbt, 650V, 30A, 175Deg C, 105W Rohs Compliant: Yes |Infineon IKB15N65EH5ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 895 |
|
$1.4600 / $2.8200 | Buy Now |
DISTI #
448-IKB15N65EH5ATMA1CT-ND
|
DigiKey | IGBT TRENCH FS 650V 30A TO263-3 Min Qty: 1 Lead time: 22 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
916 In Stock |
|
$1.2729 / $2.9300 | Buy Now |
DISTI #
IKB15N65EH5ATMA1
|
Avnet Americas | INDUSTRY 14 - Tape and Reel (Alt: IKB15N65EH5ATMA1) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 19 Weeks, 0 Days Container: Reel | 0 |
|
$1.5261 | Buy Now |
DISTI #
726-IKB15N65EH5ATMA1
|
Mouser Electronics | IGBT Transistors INDUSTRY 14 RoHS: Compliant | 241 |
|
$1.2700 / $2.9300 | Buy Now |
|
Future Electronics | IKB15N65EH5 Series 650 V 30 A High Speed Switching 5th Generation -PG-TO263-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0Reel |
|
$1.3000 / $1.3400 | Buy Now |
|
Future Electronics | IKB15N65EH5 Series 650 V 30 A High Speed Switching 5th Generation -PG-TO263-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1000 Container: Cut Tape/Mini-Reel | 0Cut Tape/Mini-Reel |
|
$1.3000 / $1.5600 | Buy Now |
|
Rochester Electronics | IKB15N65 - TRENCHSTOP IGBT with Rapid 1 RoHS: Compliant Status: Active Min Qty: 1 | 4000 |
|
$1.2200 / $1.4400 | Buy Now |
DISTI #
IKB15N65EH5ATMA1
|
Avnet Americas | INDUSTRY 14 - Tape and Reel (Alt: IKB15N65EH5ATMA1) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 19 Weeks, 0 Days Container: Reel | 0 |
|
$1.5261 | Buy Now |
DISTI #
IKB15N65EH5ATMA1
|
TME | Transistor: IGBT, 650V, 18A, 52.5W, D2PAK Min Qty: 1 | 0 |
|
$1.6100 / $2.2500 | RFQ |
|
Ameya Holding Limited | Min Qty: 250 | 920 |
|
$3.2787 / $3.3806 | Buy Now |
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IKB15N65EH5ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IKB15N65EH5ATMA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | , | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 19 Weeks | |
Samacsys Manufacturer | Infineon | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 30 A | |
Collector-Emitter Voltage-Max | 650 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Thr Voltage-Max | 4.8 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 105 W | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 180 ns | |
Turn-on Time-Nom (ton) | 34 ns | |
VCEsat-Max | 2.1 V |