Datasheets
IKQ40N120CH3XKSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, TO-247,

Part Details for IKQ40N120CH3XKSA1 by Infineon Technologies AG

Overview of IKQ40N120CH3XKSA1 by Infineon Technologies AG

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Price & Stock for IKQ40N120CH3XKSA1

Part # Distributor Description Stock Price Buy
DISTI # IKQ40N120CH3XKSA1-ND
DigiKey IGBT 1200V 80A TO247-3 Min Qty: 1 Lead time: 12 Weeks Container: Tube 205
In Stock
  • 1 $9.8500
  • 30 $7.8653
  • 120 $7.0373
  • 510 $6.2094
  • 1,020 $5.5884
$5.5884 / $9.8500 Buy Now
DISTI # IKQ40N120CH3XKSA1
Avnet Americas Transistor IGBT N-CH 1.2kV 80A Tube - Rail/Tube (Alt: IKQ40N120CH3XKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 30 Lead time: 12 Weeks, 0 Days Container: Tube 0
  • 240 $6.3528
$6.3528 Buy Now
DISTI # 726-IKQ40N120CH3XKSA
Mouser Electronics IGBT Transistors IGBT PRODUCTS RoHS: Compliant 102
  • 1 $9.8500
  • 10 $9.1400
  • 25 $7.7600
  • 100 $7.0400
  • 240 $6.7300
  • 480 $5.5800
  • 1,200 $5.5700
$5.5700 / $9.8500 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 240 Container: Tube 0
Tube
  • 240 $5.7800
$5.7800 Buy Now
Rochester Electronics IKQ40N120 - High Speed Switching IGBT RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 30
  • 1 $5.9800
  • 25 $5.8600
  • 100 $5.6200
  • 500 $5.3800
  • 1,000 $5.0800
$5.0800 / $5.9800 Buy Now
DISTI # IKQ40N120CH3XKSA1
Avnet Americas Transistor IGBT N-CH 1.2kV 80A Tube - Rail/Tube (Alt: IKQ40N120CH3XKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 30 Lead time: 12 Weeks, 0 Days Container: Tube 0
  • 240 $6.3528
$6.3528 Buy Now
DISTI # IKQ40N120CH3
TME Transistor: IGBT, 1.2kV, 40A, 136W, TO247-3, H3 Min Qty: 1 0
  • 1 $12.1400
  • 3 $10.9600
  • 10 $9.6700
$9.6700 / $12.1400 RFQ
Ameya Holding Limited   Min Qty: 1 235
  • 1 $13.0191
  • 5 $12.7661
  • 10 $11.7543
  • 100 $9.7325
  • 240 $9.7163
$9.7163 / $13.0191 Buy Now
Ameya Holding Limited Transistor: IGBT, 1.2kV, 40A, 136W, TO247-3, Series: H3 51
RFQ
DISTI # IKQ40N120CH3XKSA1
Avnet Americas Transistor IGBT N-CH 1.2kV 80A Tube - Rail/Tube (Alt: IKQ40N120CH3XKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 30 Lead time: 12 Weeks, 0 Days Container: Tube 0
  • 240 $6.3528
$6.3528 Buy Now
DISTI # SP001272706
EBV Elektronik Transistor IGBT N-CH 1.2kV 80A Tube (Alt: SP001272706) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 1 Weeks, 6 Days EBV - 0
Buy Now

Part Details for IKQ40N120CH3XKSA1

IKQ40N120CH3XKSA1 CAD Models

IKQ40N120CH3XKSA1 Part Data Attributes

IKQ40N120CH3XKSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IKQ40N120CH3XKSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, TO-247,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Collector Current-Max (IC) 80 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 444 ns
Turn-on Time-Nom (ton) 76 ns

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