Datasheets
IKW50N60DTPXKSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247,

Part Details for IKW50N60DTPXKSA1 by Infineon Technologies AG

Overview of IKW50N60DTPXKSA1 by Infineon Technologies AG

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Applications Industrial Automation Energy and Power Systems Transportation and Logistics Renewable Energy Electronic Manufacturing Automotive

Price & Stock for IKW50N60DTPXKSA1

Part # Distributor Description Stock Price Buy
DISTI # 34AC1634
Newark Igbt, Single, 600V, 80A, To-247, Dc Collector Current:80A, Collector Emitter Saturation Voltage Vce(On):1.6V, Power Dissipation Pd:319.2W, Collector Emitter Voltage V(Br)Ceo:600V, Transistor Case Style:To-247, No. Of Pins:3Pins, Rohs Compliant: Yes |Infineon IKW50N60DTPXKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $3.4500
  • 10 $2.9800
  • 25 $2.6100
  • 50 $2.4500
  • 100 $2.1300
  • 250 $1.7800
  • 500 $1.7300
$1.7300 / $3.4500 Buy Now
DISTI # IKW50N60DTPXKSA1-ND
DigiKey IGBT TRENCH FS 600V 80A TO247-3 Min Qty: 1 Lead time: 19 Weeks Container: Tube 95
In Stock
  • 1 $3.6700
  • 30 $2.9107
  • 120 $2.4948
  • 510 $2.2176
  • 1,020 $1.8988
  • 2,010 $1.7880
  • 5,010 $1.7154
$1.7154 / $3.6700 Buy Now
DISTI # IKW50N60DTPXKSA1
Avnet Americas Trans IGBT Chip N-CH 600V 80A 3 TO-247 Tube - Rail/Tube (Alt: IKW50N60DTPXKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 30 Lead time: 19 Weeks, 0 Days Container: Tube 0
  • 240 $1.9443
  • 300 $1.8871
  • 540 $1.8299
  • 1,200 $1.7727
  • 2,400 $1.7155
  • 12,000 $1.6584
  • 24,000 $1.6012
$1.6012 / $1.9443 Buy Now
DISTI # 726-IKW50N60DTPXKSA1
Mouser Electronics IGBT Transistors INDUSTRY 14 RoHS: Compliant 1652
  • 1 $3.2700
  • 10 $3.2200
  • 25 $2.6300
  • 100 $2.5000
  • 240 $2.1500
  • 480 $2.1400
  • 1,200 $1.8900
  • 2,640 $1.7100
$1.7100 / $3.2700 Buy Now
DISTI # V36:1790_14664357
Arrow Electronics Trans IGBT Chip N-CH 600V 100A 319.2W 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 19 Weeks Date Code: 2237 Americas - 45
  • 1 $2.1230
  • 10 $2.0840
  • 25 $1.8900
  • 100 $1.8310
  • 240 $1.7150
  • 480 $1.5970
  • 1,200 $1.5090
  • 2,640 $1.4350
$1.4350 / $2.1230 Buy Now
Future Electronics IKW50N60DTP Series 600 V 80 A Through Hole Trench Field Stop IGBT - PG-TO247-3 RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $1.5500
  • 480 $1.5300
  • 960 $1.5100
  • 1,200 $1.5000
  • 3,600 $1.4600
$1.4600 / $1.5500 Buy Now
DISTI # 74510039
Verical Trans IGBT Chip N-CH 600V 100A 319.2W 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 2237 Americas - 45
  • 5 $2.1230
  • 10 $2.0840
  • 25 $1.8900
  • 100 $1.8310
  • 240 $1.7150
  • 480 $1.5970
  • 1,200 $1.5090
  • 2,640 $1.4350
$1.4350 / $2.1230 Buy Now
Rochester Electronics IKW50N60 - Discrete IGBT with Anti-Parallel Diode RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 57
  • 1 $2.0000
  • 25 $1.9600
  • 100 $1.8800
  • 500 $1.8000
  • 1,000 $1.7000
$1.7000 / $2.0000 Buy Now
DISTI # IKW50N60DTP
TME Transistor: IGBT, 600V, 61A, 159.6W, TO247-3 Min Qty: 1 28
  • 1 $3.8600
  • 3 $3.4100
  • 10 $3.0600
  • 30 $2.8600
$2.8600 / $3.8600 Buy Now
Ameya Holding Limited   Min Qty: 60 220
  • 60 $5.0914
  • 120 $4.8366
$4.8366 / $5.0914 Buy Now
DISTI # SP001379678
EBV Elektronik Trans IGBT Chip N-CH 600V 80A 3 TO-247 Tube (Alt: SP001379678) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 20 Weeks, 0 Days EBV - 1440
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 240 1200
  • 240 $2.4600
  • 1,200 $2.2800
$2.2800 / $2.4600 Buy Now

Part Details for IKW50N60DTPXKSA1

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IKW50N60DTPXKSA1 Part Data Attributes

IKW50N60DTPXKSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IKW50N60DTPXKSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247,
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 19 Weeks
Samacsys Manufacturer Infineon
Collector Current-Max (IC) 80 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 332 ns
Turn-on Time-Nom (ton) 55 ns

Alternate Parts for IKW50N60DTPXKSA1

This table gives cross-reference parts and alternative options found for IKW50N60DTPXKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IKW50N60DTPXKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IKW50N60DTP Insulated Gate Bipolar Transistor, Infineon Technologies AG IKW50N60DTPXKSA1 vs IKW50N60DTP
Part Number Description Manufacturer Compare
IRGP4650D Insulated Gate Bipolar Transistor, 76A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN Infineon Technologies AG IKW50N60DTPXKSA1 vs IRGP4650D
IRGP4069D-EPBF Insulated Gate Bipolar Transistor, 76A I(C), 600V V(BR)CES, N-Channel, TO-247AD, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG IKW50N60DTPXKSA1 vs IRGP4069D-EPBF
IRGP4263DPBF Insulated Gate Bipolar Transistor, 90A I(C), 650V V(BR)CES, N-Channel, Infineon Technologies AG IKW50N60DTPXKSA1 vs IRGP4263DPBF
IRGP4069DPBF Insulated Gate Bipolar Transistor, 76A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG IKW50N60DTPXKSA1 vs IRGP4069DPBF
IKW50N60DTP Insulated Gate Bipolar Transistor, Infineon Technologies AG IKW50N60DTPXKSA1 vs IKW50N60DTP

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