Part Details for IPA60R650CE by Infineon Technologies AG
Overview of IPA60R650CE by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IPA60R650CE
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
36530112
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Verical | Trans MOSFET N-CH 600V 9.9A 3-Pin(3+Tab) TO-220FP Tube RoHS: Compliant Min Qty: 105 Package Multiple: 1 Date Code: 1801 | Americas - 180 |
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$0.7789 | Buy Now |
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Quest Components | 144 |
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$1.0575 / $2.1150 | Buy Now | |
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DISTI #
TMOSP11635
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Rutronik | N-CH 600V 7A 650mOhm TO220FP RoHS: Compliant Min Qty: 50 Package Multiple: 50 Container: Tube |
Stock DE - 2400 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$0.4248 / $0.5510 | Buy Now |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2018 Date Code: 2018 | 180 |
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$0.4230 / $0.7640 | Buy Now |
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LCSC | TO-220 MOSFETs ROHS | 40 |
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$0.5238 / $0.8983 | Buy Now |
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Wuhan P&S | 650V,9.9A,N Channel Power MOSFET Min Qty: 1 | 450 |
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$0.4700 / $0.6600 | Buy Now |
Part Details for IPA60R650CE
IPA60R650CE CAD Models
IPA60R650CE Part Data Attributes:
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IPA60R650CE
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPA60R650CE
Infineon Technologies AG
Power Field-Effect Transistor, 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 133 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain-source On Resistance-Max | 0.65 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 19 A | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |