Part Details for IPB100N04S2L03ATMA2 by Infineon Technologies AG
Overview of IPB100N04S2L03ATMA2 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPB100N04S2L03ATMA2
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-IPB100N04S2L03ATMA2-ND
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DigiKey | MOSFET N-CH 40V 100A TO263-3 Min Qty: 136 Lead time: 39 Weeks Container: Bulk MARKETPLACE PRODUCT |
51328 In Stock |
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$2.2200 | Buy Now |
DISTI #
IPB100N04S2L03ATMA2-ND
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DigiKey | MOSFET N-CH 40V 100A TO263-3 Min Qty: 136 Lead time: 39 Weeks Container: Tape & Reel (TR) | Limited Supply - Call |
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$1.9161 / $2.1211 | Buy Now |
DISTI #
IPB100N04S2L03ATMA2
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Avnet Americas | Trans MOSFET N-CH 40V 100A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB100N04S2L03ATMA2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0 |
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$2.0694 / $2.5293 | Buy Now |
DISTI #
726-IPB100N04S2L03AT
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Mouser Electronics | MOSFET MOSFET_(20V 40V) RoHS: Compliant | 0 |
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Order Now | |
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Rochester Electronics | IPB100N04 - 20V-40V N-Channel Automotive MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 51328 |
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$1.9000 / $2.2400 | Buy Now |
DISTI #
IPB100N04S2L03ATMA2
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Avnet Americas | Trans MOSFET N-CH 40V 100A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB100N04S2L03ATMA2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0 |
|
$2.0694 / $2.5293 | Buy Now |
DISTI #
IPB100N04S2L03ATMA2
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Avnet Americas | Trans MOSFET N-CH 40V 100A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB100N04S2L03ATMA2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0 |
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$2.0694 / $2.5293 | Buy Now |
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CHIPMALL.COM LIMITED | 241 |
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$1.4510 | Buy Now | |
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Perfect Parts Corporation | 270 |
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RFQ |
Part Details for IPB100N04S2L03ATMA2
IPB100N04S2L03ATMA2 CAD Models
IPB100N04S2L03ATMA2 Part Data Attributes
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IPB100N04S2L03ATMA2
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB100N04S2L03ATMA2
Infineon Technologies AG
Power Field-Effect Transistor, 100A I(D), 40V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC, TO-263, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 810 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 100 A | |
Drain-source On Resistance-Max | 0.003 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
Alternate Parts for IPB100N04S2L03ATMA2
This table gives cross-reference parts and alternative options found for IPB100N04S2L03ATMA2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB100N04S2L03ATMA2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPB100N04S3-03 | Power Field-Effect Transistor, 100A I(D), 40V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB100N04S2L03ATMA2 vs IPB100N04S3-03 |
BUK953R2-40E,127 | N-channel TrenchMOS logic level FET TO-220 3-Pin | NXP Semiconductors | IPB100N04S2L03ATMA2 vs BUK953R2-40E,127 |
IPD90N04S403ATMA1 | Power Field-Effect Transistor, 90A I(D), 40V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 | Infineon Technologies AG | IPB100N04S2L03ATMA2 vs IPD90N04S403ATMA1 |
934066421127 | 100A, 40V, 0.0032ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN | NXP Semiconductors | IPB100N04S2L03ATMA2 vs 934066421127 |
IPC100N04S52R8ATMA1 | Power Field-Effect Transistor, 100A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8-33, 8 PIN | Infineon Technologies AG | IPB100N04S2L03ATMA2 vs IPC100N04S52R8ATMA1 |
IPD90N04S4-03 | Power Field-Effect Transistor, 90A I(D), 40V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPB100N04S2L03ATMA2 vs IPD90N04S4-03 |
IPB100N04S204ATMA1 | Power Field-Effect Transistor, 100A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB100N04S2L03ATMA2 vs IPB100N04S204ATMA1 |
AUIRFR8403TRLARMA1 | Power Field-Effect Transistor, 100A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3/2 | Infineon Technologies AG | IPB100N04S2L03ATMA2 vs AUIRFR8403TRLARMA1 |
IPD90N04S3-04 | Power Field-Effect Transistor, 90A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN | Infineon Technologies AG | IPB100N04S2L03ATMA2 vs IPD90N04S3-04 |