Datasheets
IPB100N04S303ATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 100A I(D), 40V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Part Details for IPB100N04S303ATMA1 by Infineon Technologies AG

Overview of IPB100N04S303ATMA1 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IPB100N04S303ATMA1

Part # Distributor Description Stock Price Buy
DISTI # 2156-IPB100N04S303ATMA1-ND
DigiKey MOSFET N-CH 40V 100A TO263-3 Min Qty: 147 Lead time: 12 Weeks Container: Bulk MARKETPLACE PRODUCT 790
In Stock
  • 147 $2.0500
$2.0500 Buy Now
DISTI # IPB100N04S303ATMA1TR-ND
DigiKey MOSFET N-CH 40V 100A TO263-3 Min Qty: 147 Lead time: 12 Weeks Container: Tape & Reel (TR) Limited Supply - Call
  • 1,000 $1.9643
  • 2,000 $1.8496
  • 5,000 $1.7745
$1.7745 / $1.9643 Buy Now
DISTI # IPB100N04S303ATMA1
Avnet Americas Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB100N04S303ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 1,000 $2.3423
  • 2,000 $2.2714
  • 4,000 $2.2004
  • 6,000 $2.1294
  • 8,000 $2.0584
  • 10,000 $1.9874
  • 100,000 $1.9165
$1.9165 / $2.3423 Buy Now
Rochester Electronics IPB100N04 - 20V-40V N-Channel Automotive MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 790
  • 1 $2.0700
  • 25 $2.0300
  • 100 $1.9500
  • 500 $1.8600
  • 1,000 $1.7600
$1.7600 / $2.0700 Buy Now
DISTI # IPB100N04S303ATMA1
Avnet Americas Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB100N04S303ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 1,000 $2.3423
  • 2,000 $2.2714
  • 4,000 $2.2004
  • 6,000 $2.1294
  • 8,000 $2.0584
  • 10,000 $1.9874
  • 100,000 $1.9165
$1.9165 / $2.3423 Buy Now
DISTI # IPB100N04S303
TME Transistor: N-MOSFET, OptiMOS™ T, unipolar, 40V, 100A, 214W Min Qty: 1 0
  • 1 $1.8200
  • 5 $1.6300
  • 25 $1.4400
  • 100 $1.3000
$1.3000 / $1.8200 RFQ
DISTI # IPB100N04S303ATMA1
Avnet Americas Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB100N04S303ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 1,000 $2.3423
  • 2,000 $2.2714
  • 4,000 $2.2004
  • 6,000 $2.1294
  • 8,000 $2.0584
  • 10,000 $1.9874
  • 100,000 $1.9165
$1.9165 / $2.3423 Buy Now
DISTI # SP000260847
EBV Elektronik Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) TO-263 (Alt: SP000260847) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 1 Weeks, 6 Days EBV - 0
Buy Now

Part Details for IPB100N04S303ATMA1

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IPB100N04S303ATMA1 Part Data Attributes

IPB100N04S303ATMA1 Infineon Technologies AG
Buy Now Datasheet
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IPB100N04S303ATMA1 Infineon Technologies AG Power Field-Effect Transistor, 100A I(D), 40V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC, TO-263, 3 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Additional Feature ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 898 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.0028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for IPB100N04S303ATMA1

This table gives cross-reference parts and alternative options found for IPB100N04S303ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB100N04S303ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPB022N04LGATMA1 Power Field-Effect Transistor, 90A I(D), 40V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPB100N04S303ATMA1 vs IPB022N04LGATMA1
IPB022N04LG Power Field-Effect Transistor, 90A I(D), 40V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPB100N04S303ATMA1 vs IPB022N04LG

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