Datasheets
IPB100N12S305ATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 100A I(D), 120V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263-3-2, 3/2 PIN

Part Details for IPB100N12S305ATMA1 by Infineon Technologies AG

Overview of IPB100N12S305ATMA1 by Infineon Technologies AG

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Price & Stock for IPB100N12S305ATMA1

Part # Distributor Description Stock Price Buy
DISTI # 39AH8895
Newark Mosfet, N-Ch, 120V, 175Deg C, 300W Rohs Compliant: Yes |Infineon IPB100N12S305ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 788
  • 1 $4.9800
  • 10 $4.1900
  • 25 $3.9500
  • 50 $3.6700
  • 100 $3.3900
  • 250 $3.1900
  • 500 $3.0100
  • 1,000 $2.5800
$2.5800 / $4.9800 Buy Now
DISTI # IPB100N12S305ATMA1CT-ND
DigiKey MOSFET N-CH 120V 100A TO263-3 Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 3839
In Stock
  • 1 $3.3700
  • 10 $2.8330
  • 100 $2.2922
  • 500 $2.2420
  • 1,000 $2.2420
$2.2420 / $3.3700 Buy Now
DISTI # 726-IPB100N12S305AT
Mouser Electronics MOSFET N-CHANNEL 100+ RoHS: Compliant 1002
  • 1 $3.3700
  • 10 $2.8400
  • 100 $2.3000
  • 500 $2.2500
  • 1,000 $2.2400
$2.2400 / $3.3700 Buy Now
DISTI # 79926956
Verical Trans MOSFET N-CH 120V 100A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2407 Americas - 5000
  • 1,000 $2.8876
$2.8876 Buy Now
DISTI # 71241191
Verical Trans MOSFET N-CH 120V 100A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R Min Qty: 8 Package Multiple: 1 Date Code: 2333 Americas - 648
  • 6 $4.0625
  • 10 $3.6500
  • 50 $3.0250
  • 100 $3.0125
  • 200 $2.9000
  • 500 $2.6375
$2.6375 / $4.0625 Buy Now
Rochester Electronics IPB100N12S3-05 - 120V, N-Ch, , Automotive MOSFET RoHS: Compliant Status: Active Min Qty: 1 735
  • 1 $2.6200
  • 25 $2.5600
  • 100 $2.4600
  • 500 $2.3500
  • 1,000 $2.2200
$2.2200 / $2.6200 Buy Now
Ameya Holding Limited   Min Qty: 1 990
  • 1 $5.6206
  • 10 $4.9496
  • 100 $4.1441
  • 250 $4.0652
  • 500 $3.5234
$3.5234 / $5.6206 Buy Now
Chip1Cloud MOSFET N-CH 120V 100A TO263-3 2050
RFQ
DISTI # C1S322001060406
Chip1Stop MOSFET RoHS: Compliant Container: Cut Tape 648
  • 1 $3.2500
  • 10 $2.9200
  • 50 $2.4200
  • 100 $2.4100
  • 200 $2.3200
  • 500 $2.1100
$2.1100 / $3.2500 Buy Now
Chips Pulse Industry Limited TO-263-3-1 MOSFETs ROHS Purchase Online, Ship Immediately 48
  • 1 $7.2608
  • 10 $6.4160
  • 30 $5.8991
  • 100 $5.4681
$5.4681 / $7.2608 Buy Now
DISTI # 3227629RL
element14 Asia-Pacific MOSFET, N-CH, 120V, 175DEG C, 300W RoHS: Compliant Min Qty: 100 Container: Reel 788
  • 100 $3.2144
  • 500 $3.0241
  • 1,000 $2.5994
$2.5994 / $3.2144 Buy Now
DISTI # 3227629
element14 Asia-Pacific MOSFET, N-CH, 120V, 175DEG C, 300W RoHS: Compliant Min Qty: 1 Container: Cut Tape 788
  • 1 $5.0157
  • 10 $3.9759
  • 100 $3.2144
  • 500 $3.0241
  • 1,000 $2.5994
$2.5994 / $5.0157 Buy Now
DISTI # 3227629
Farnell MOSFET, N-CH, 120V, 175DEG C, 300W RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Cut Tape 788
  • 1 $5.3136
  • 10 $3.7918
  • 100 $3.0684
  • 500 $2.8813
  • 1,000 $2.4822
$2.4822 / $5.3136 Buy Now
DISTI # 3227629RL
Farnell MOSFET, N-CH, 120V, 175DEG C, 300W RoHS: Compliant Min Qty: 100 Lead time: 27 Weeks, 1 Days Container: Reel 788
  • 100 $3.0684
  • 500 $2.8813
  • 1,000 $2.4822
$2.4822 / $3.0684 Buy Now
LCSC 120V 100A 5.1m100A10V 300W 4V240uA 1PCSNChannel TO-263-3 MOSFETs ROHS 40
  • 1 $3.3884
  • 10 $2.9942
  • 30 $2.7530
  • 100 $2.5518
$2.5518 / $3.3884 Buy Now
Perfect Parts Corporation   6
RFQ

Part Details for IPB100N12S305ATMA1

IPB100N12S305ATMA1 CAD Models

IPB100N12S305ATMA1 Part Data Attributes

IPB100N12S305ATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPB100N12S305ATMA1 Infineon Technologies AG Power Field-Effect Transistor, 100A I(D), 120V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263-3-2, 3/2 PIN
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 52 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 1445 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 120 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.0048 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 330 pF
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 300 W
Pulsed Drain Current-Max (IDM) 400 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for IPB100N12S305ATMA1

This table gives cross-reference parts and alternative options found for IPB100N12S305ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB100N12S305ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

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IPB100N12S3-05 Power Field-Effect Transistor Infineon Technologies AG IPB100N12S305ATMA1 vs IPB100N12S3-05
Part Number Description Manufacturer Compare
IPB100N12S3-05 Power Field-Effect Transistor Infineon Technologies AG IPB100N12S305ATMA1 vs IPB100N12S3-05
IPI100N12S3-05 Power Field-Effect Transistor Infineon Technologies AG IPB100N12S305ATMA1 vs IPI100N12S3-05

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