-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, 88A I(D), 200V, 0.0107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
50Y2007
|
Newark | Mosfet, N-Ch, 200V, 88A, To-263, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:88A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IPB107N20NAATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 98 |
|
$6.1900 / $9.8200 | Buy Now |
DISTI #
IPB107N20NAATMA1CT-ND
|
DigiKey | MOSFET N-CH 200V 88A D2PAK Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
8821 In Stock |
|
$4.9067 / $6.6300 | Buy Now |
DISTI #
IPB107N20NAATMA1
|
Avnet Americas | Trans MOSFET N-CH 200V 88A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB107N20NAATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
|
$6.0844 | Buy Now |
DISTI #
50Y2007
|
Avnet Americas | Trans MOSFET N-CH 200V 88A 3-Pin(2+Tab) TO-263 - Product that comes on tape, but is not reeled (Alt: 50Y2007) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 3 Days Container: Ammo Pack | 98 Partner Stock |
|
$7.0100 / $9.8200 | Buy Now |
DISTI #
726-IPB107N20NATMA1
|
Mouser Electronics | MOSFET Mosfet, DCtoDC Nchannel 200V RoHS: Compliant | 670 |
|
$4.9000 / $6.6300 | Buy Now |
DISTI #
E02:0323_03615884
|
Arrow Electronics | Trans MOSFET N-CH 200V 88A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks Date Code: 2306 | Europe - 1000 |
|
$4.7685 | Buy Now |
|
Future Electronics | Single N-Channel 200V 10.7 mOhm 65 nC OptiMOS™ Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 1000Reel |
|
$5.0800 | Buy Now |
|
Future Electronics | Single N-Channel 200V 10.7 mOhm 65 nC OptiMOS™ Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0Reel |
|
$5.0800 | Buy Now |
DISTI #
77576506
|
Verical | Trans MOSFET N-CH 200V 88A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2403 | Americas - 25000 |
|
$6.3199 | Buy Now |
DISTI #
76918137
|
Verical | Trans MOSFET N-CH 200V 88A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2306 | Americas - 1000 |
|
$4.7578 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
IPB107N20NAATMA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPB107N20NAATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 88A I(D), 200V, 0.0107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
|
Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | D2PAK | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 18 Weeks, 3 Days | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 560 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 88 A | |
Drain-source On Resistance-Max | 0.0107 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 352 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |