Part Details for IPB10N03L by Infineon Technologies AG
Overview of IPB10N03L by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPB10N03L
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Bristol Electronics | Min Qty: 3 | 300 |
|
$0.5400 / $1.6875 | Buy Now |
|
Quest Components | MOSFET Transistor, N-Channel, TO-263AB | 240 |
|
$0.6750 / $2.2500 | Buy Now |
|
Quest Components | MOSFET Transistor, N-Channel, TO-263AB | 4000 |
|
$0.5550 / $1.8500 | Buy Now |
|
Velocity Electronics | Our Stock | 26458 |
|
RFQ |
Part Details for IPB10N03L
IPB10N03L CAD Models
IPB10N03L Part Data Attributes
|
IPB10N03L
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPB10N03L
Infineon Technologies AG
Power Field-Effect Transistor, 73A I(D), 30V, 0.0131ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN
|
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | D2PAK | |
Package Description | PLASTIC, TO-263, 3 PIN | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 25 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 73 A | |
Drain-source On Resistance-Max | 0.0131 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 220 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 90 W | |
Pulsed Drain Current-Max (IDM) | 292 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IPB10N03L
This table gives cross-reference parts and alternative options found for IPB10N03L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB10N03L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
PHD83N03LT | 72A, 25V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3 | NXP Semiconductors | IPB10N03L vs PHD83N03LT |
IXFH12N100F | Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | IXYS Corporation | IPB10N03L vs IXFH12N100F |
SSS7N60B | Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | Fairchild Semiconductor Corporation | IPB10N03L vs SSS7N60B |
BUK465-60A | 41A, 60V, 0.038ohm, N-CHANNEL, Si, POWER, MOSFET | NXP Semiconductors | IPB10N03L vs BUK465-60A |
FDP6035L | Power Field-Effect Transistor, 58A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | IPB10N03L vs FDP6035L |
FQA17N40 | Power Field-Effect Transistor, 17.2A I(D), 400V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PN, 3 PIN | Fairchild Semiconductor Corporation | IPB10N03L vs FQA17N40 |
SPB80N06S2-07 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB10N03L vs SPB80N06S2-07 |
IXFH30N40Q | Power Field-Effect Transistor, 30A I(D), 400V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | Littelfuse Inc | IPB10N03L vs IXFH30N40Q |
STW80N06-10 | 80A, 60V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN | STMicroelectronics | IPB10N03L vs STW80N06-10 |
IXFK35N50 | Power Field-Effect Transistor, 35A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264, TO-264, 3 PIN | IXYS Corporation | IPB10N03L vs IXFK35N50 |