Part Details for IPB80N06S2L11ATMA2 by Infineon Technologies AG
Overview of IPB80N06S2L11ATMA2 by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IPB80N06S2L11ATMA2
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
448-IPB80N06S2L11ATMA2CT-ND
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DigiKey | MOSFET N-CH 55V 80A TO263-3 Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
911 In Stock |
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$0.9220 / $2.2000 | Buy Now |
DISTI #
IPB80N06S2L11ATMA2
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Avnet Americas | Trans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB80N06S2L11ATMA2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$1.1433 | Buy Now |
DISTI #
IPB80N06S2L11ATMA2
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Avnet Americas | Trans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB80N06S2L11ATMA2) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$1.1433 | Buy Now |
DISTI #
726-IPB80N06S2L11ATM
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Mouser Electronics | MOSFET MOSFET_)40V 60V) RoHS: Compliant | 3 |
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$0.9530 / $2.1900 | Buy Now |
DISTI #
SP001061398
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EBV Elektronik | Trans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R (Alt: SP001061398) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IPB80N06S2L11ATMA2
IPB80N06S2L11ATMA2 CAD Models
IPB80N06S2L11ATMA2 Part Data Attributes:
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IPB80N06S2L11ATMA2
Infineon Technologies AG
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Datasheet
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IPB80N06S2L11ATMA2
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 55V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 280 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 80 A | |
Drain-source On Resistance-Max | 0.0147 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 320 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |