Part Details for IPC218N06N3 by Infineon Technologies AG
Overview of IPC218N06N3 by Infineon Technologies AG
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Applications
Consumer Electronics
Security and Surveillance
Part Details for IPC218N06N3
IPC218N06N3 CAD Models
IPC218N06N3 Part Data Attributes:
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IPC218N06N3
Infineon Technologies AG
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Datasheet
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IPC218N06N3
Infineon Technologies AG
Small Signal Field-Effect Transistor, 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | DIE | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain-source On Resistance-Max | 0.1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XXUC-N | |
Number of Elements | 1 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | UNCASED CHIP | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | UNSPECIFIED | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |