Part Details for IPD30N03S4L09ATMA1 by Infineon Technologies AG
Overview of IPD30N03S4L09ATMA1 by Infineon Technologies AG
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPD30N03S4L09ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
50Y2030
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Newark | Mosfet Transistor, N Channel, 30 A, 30 V, 0.0073 Ohm, 10 V, 1.5 V Rohs Compliant: Yes |Infineon IPD30N03S4L09ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 4012 |
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$0.4060 / $0.9150 | Buy Now |
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DISTI #
IPD30N03S4L09ATMA1CT-ND
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DigiKey | MOSFET N-CH 30V 30A TO252-3 Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
30472 In Stock |
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$0.3332 / $0.6200 | Buy Now |
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DISTI #
IPD30N03S4L09ATMA1
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Avnet Americas | Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD30N03S4L09ATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.4132 | Buy Now |
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DISTI #
V72:2272_06391066
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Arrow Electronics | Trans MOSFET N-CH 30V 30A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2231 Container: Cut Strips | Americas - 6873 |
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$0.3419 / $0.4439 | Buy Now |
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Rochester Electronics | IPD30N03 - 20V-40V N-Channel Automotive MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 4828 |
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$0.3305 / $0.3888 | Buy Now |
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DISTI #
IPD30N03S4L09ATMA1
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Avnet Americas | Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD30N03S4L09ATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.4132 | Buy Now |
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Ameya Holding Limited | MOSFET_(20V,40V) | 1569 |
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RFQ | |
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DISTI #
SP000415578
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EBV Elektronik | Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252 (Alt: SP000415578) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 1 Weeks, 6 Days | EBV - 117500 |
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Buy Now | |
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DISTI #
2480825RL
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element14 Asia-Pacific | MOSFET, N-CH, 30V, 30A, TO-252-3 RoHS: Compliant Min Qty: 1 Container: Reel | 6487 |
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$0.3192 | Buy Now |
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DISTI #
2480825
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element14 Asia-Pacific | MOSFET, N-CH, 30V, 30A, TO-252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape | 6487 |
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$0.3192 | Buy Now |
Part Details for IPD30N03S4L09ATMA1
IPD30N03S4L09ATMA1 CAD Models
IPD30N03S4L09ATMA1 Part Data Attributes:
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IPD30N03S4L09ATMA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
IPD30N03S4L09ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 30A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 28 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.009 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 120 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for IPD30N03S4L09ATMA1
This table gives cross-reference parts and alternative options found for IPD30N03S4L09ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD30N03S4L09ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPD30N03S4L-09 | Power Field-Effect Transistor, 30A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC, TO-252, 3 PIN | Infineon Technologies AG | IPD30N03S4L09ATMA1 vs IPD30N03S4L-09 |
| SIRA18ADP-T1-GE3 | Power Field-Effect Transistor, 30.6A I(D), 30V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Vishay Intertechnologies | IPD30N03S4L09ATMA1 vs SIRA18ADP-T1-GE3 |