Part Details for IPD60R600E6ATMA1 by Infineon Technologies AG
Overview of IPD60R600E6ATMA1 by Infineon Technologies AG
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
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Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Electronic Manufacturing
Price & Stock for IPD60R600E6ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC9046
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Newark | Mosfet, N-Ch, 600V, 7.3A, To-252-3, Transistor Polarity:N Channel, Continuous Drain Current Id:7.3A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.54Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Rohs Compliant: Yes |Infineon IPD60R600E6ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$1.0100 / $1.6000 | Buy Now |
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DISTI #
448-IPD60R600E6ATMA1TR-ND
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DigiKey | MOSFET N-CH 600V 7.3A TO252 Min Qty: 2500 Lead time: 15 Weeks Container: Tape & Reel (TR) | Limited Supply - Call |
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$0.5780 / $0.6362 | Buy Now |
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DISTI #
IPD60R600E6ATMA1
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Avnet Americas | Trans MOSFET N-CH 650V 7.3A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R600E6ATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
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$0.6230 / $0.7615 | Buy Now |
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DISTI #
726-IPD60R600E6ATMA1
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Mouser Electronics | MOSFET LOW POWER_LEGACY RoHS: Compliant | 1180 |
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$0.6310 / $1.5300 | Buy Now |
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DISTI #
IPD60R600E6ATMA1
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Avnet Americas | Trans MOSFET N-CH 650V 7.3A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R600E6ATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
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$0.6230 / $0.7615 | Buy Now |
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DISTI #
IPD60R600E6ATMA1
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Avnet Americas | Trans MOSFET N-CH 650V 7.3A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R600E6ATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
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$0.6230 / $0.7615 | Buy Now |
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DISTI #
SP001117094
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EBV Elektronik | Trans MOSFET N-CH 650V 7.3A 3-Pin TO-252 T/R (Alt: SP001117094) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 2 Weeks, 2 Days | EBV - 0 |
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Buy Now | |
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DISTI #
2726053RL
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Farnell | MOSFET, N-CH, 600V, 7.3A, TO-252-3 RoHS: Compliant Min Qty: 2500 Lead time: 27 Weeks, 1 Days Container: Reel | 0 |
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$0.6372 | Buy Now |
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DISTI #
2726053
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Farnell | MOSFET, N-CH, 600V, 7.3A, TO-252-3 RoHS: Compliant Min Qty: 2500 Lead time: 27 Weeks, 1 Days Container: Cut Tape | 0 |
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$0.6372 | Buy Now |
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Win Source Electronics | MOSFET N-CH 600V 7.3A TO252 | 147900 |
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$0.3960 / $0.5940 | Buy Now |
Part Details for IPD60R600E6ATMA1
IPD60R600E6ATMA1 CAD Models
IPD60R600E6ATMA1 Part Data Attributes
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IPD60R600E6ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD60R600E6ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC PACKAGE-3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 133 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain-source On Resistance-Max | 0.6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 19 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPD60R600E6ATMA1
This table gives cross-reference parts and alternative options found for IPD60R600E6ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD60R600E6ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPD60R600E6BTMA1 | Power Field-Effect Transistor, 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, ROHS COMPLIANT, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPD60R600E6ATMA1 vs IPD60R600E6BTMA1 |
| IPD60R600E6 | Power Field-Effect Transistor, 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPD60R600E6ATMA1 vs IPD60R600E6 |